Paper Titles
An In-Situ Post Growth Annealing Process for the Improvement of 4H-SiC/SiO2 MOS Interface Prepared by CVD Using TEOS, and its Characteristic Study
p.681
High Temperature NO Annealing of Deposited SiO2 and SiON Films on N-Type 4H-SiC
p.685
Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC
p.689
Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation
p.693
Effects of N2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability
p.697
Characterization of Aluminium and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique
p.701
Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC
p.705
Characterization of 4H-SiC MOS Structures with Al2O3 as Gate Dielectric
p.709
4H-SiC MOSFETs Using Thermal Oxidized Ta2Si Films as High-k Gate Dielectric
p.713

Effects of N2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability

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Abstract:

The effect of N2O anneal on channel mobility of inversion-type 4H-SiC n-channel MOSFET has been systematically investigated. It is found that the mobility increases with increasing anneal temperature from 900 to 1150°C. The highest field effect mobility of 30 cm2/Vs is achieved by 1150°C anneal for 3 h, which is about 20 times higher than that for non-annealed MOSFET. In order to investigate the oxide reliability, TDDB measurement has been performed on SiO2 grown on n-type 4H-SiC. The oxide lifetime is found to be drastically improved by N2O anneal.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

697-700

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.697

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Online since:

May 2005

Authors:

Keiko Fujihira, Yoichiro Tarui, Kenichi Ohtsuka, Masayuki Imaizumi, Tetsuya Takami

Keywords:

Channel Mobility, MOS, Nitridation, Reliability, Time-Dependent Dielectric Breakdown

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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References

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