Low On-Resistance in Normally-Off 4H-SiC Accumulation MOSFET

Eiichi Okuno; Takeshi Endo; Hideo Matsuki; Toshio Sakakibara; Hiroaki Tanaka

doi:10.4028/www.scientific.net/MSF.483-485.817

Paper Titles

Realisation of Large Area 3C-SiC MOSFETs
p.801

4H-SiC Lateral RESURF MOSFETs on Carbon-Face Substrates
p.805

Dose Designing for High-Voltage 4H-SiC RESURF MOSFETs - Device Simulation and Fabrication
p.809

Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFET
p.813

Low On-Resistance in Normally-Off 4H-SiC Accumulation MOSFET
p.817

Short-Channel Effects in 4H-SiC MOSFETs
p.821

Performance of SiC Cascode Switches with Si MOS Gate
p.825

Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping
p.829

Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material
p.833

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Low On-Resistance in Normally-Off 4H-SiC...

Low On-Resistance in Normally-Off 4H-SiC Accumulation MOSFET

Abstract:

In our previous paper [1], we simulated an accumulation-mode MOSFET with an epitaxial layer channel (epi-channel) that had a high channel mobility. In this paper, we experimentally show that channel mobility is enhanced by the epi-channel. On varying the thickness of the epi-channel, the channel mobility improved from a few cm2/Vs to 100 cm2/Vs. Finally, we show that the “Normally-off” accumulation MOSFET with a 720 V breakdown voltage has a low on-resistance (10.4 m1cm2) and that the 3 × 3 mm2 accumulation MOSFET operates over 10 A and its on-resistance is 19 m1cm2.

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Materials Science Forum (Volumes 483-485)

Pages:

817-820

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.817

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Online since:

May 2005

Authors:

Eiichi Okuno, Takeshi Endo, Hideo Matsuki, Toshio Sakakibara, Hiroaki Tanaka

Keywords:

Accumulation MOSFET, Epitaxial Layer Channel (Epi-Channel), Normally-Off

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