Low On-Resistance in Normally-Off 4H-SiC Accumulation MOSFET
In our previous paper , we simulated an accumulation-mode MOSFET with an epitaxial layer channel (epi-channel) that had a high channel mobility. In this paper, we experimentally show that channel mobility is enhanced by the epi-channel. On varying the thickness of the epi-channel, the channel mobility improved from a few cm2/Vs to 100 cm2/Vs. Finally, we show that the “Normally-off” accumulation MOSFET with a 720 V breakdown voltage has a low on-resistance (10.4 m1cm2) and that the 3 × 3 mm2 accumulation MOSFET operates over 10 A and its on-resistance is 19 m1cm2.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
E. Okuno et al., "Low On-Resistance in Normally-Off 4H-SiC Accumulation MOSFET", Materials Science Forum, Vols. 483-485, pp. 817-820, 2005