Performance of SiC Cascode Switches with Si MOS Gate

Gheorghe Brezeanu; C. Boianceanu; M. Brezeanu; Andrej Mihaila; F. Udrea; G. Amaratunga

doi:10.4028/www.scientific.net/MSF.483-485.825

Paper Titles

Dose Designing for High-Voltage 4H-SiC RESURF MOSFETs - Device Simulation and Fabrication
p.809

Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFET
p.813

Low On-Resistance in Normally-Off 4H-SiC Accumulation MOSFET
p.817

Short-Channel Effects in 4H-SiC MOSFETs
p.821

Performance of SiC Cascode Switches with Si MOS Gate
p.825

Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping
p.829

Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material
p.833

High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment
p.837

High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
p.841

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Performance of SiC Cascode Switches with Si MOS...

Performance of SiC Cascode Switches with Si MOS Gate

Abstract:

The behavior of the MOS switch and of two cascode configurations are evaluated, by using OR-CAD simulations, and the resulting data are comparatively presented. By analytical and numerical investigations, the superior performance of the multiple cascode circuit is demonstrated.