Performance of SiC Cascode Switches with Si MOS Gate

Abstract:

Article Preview

The behavior of the MOS switch and of two cascode configurations are evaluated, by using OR-CAD simulations, and the resulting data are comparatively presented. By analytical and numerical investigations, the superior performance of the multiple cascode circuit is demonstrated.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

825-828

DOI:

10.4028/www.scientific.net/MSF.483-485.825

Citation:

G. Brezeanu et al., "Performance of SiC Cascode Switches with Si MOS Gate", Materials Science Forum, Vols. 483-485, pp. 825-828, 2005

Online since:

May 2005

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Price:

$35.00

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