Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material

G. Gudjónsson; H.Ö. Ólafsson; Fredrik Allerstam; Per Åke Nilsson; E.Ö. Sveinbjörnsson; T. Rödle; R. Jos

doi:10.4028/www.scientific.net/MSF.483-485.833

Paper Titles

Low On-Resistance in Normally-Off 4H-SiC Accumulation MOSFET
p.817

Short-Channel Effects in 4H-SiC MOSFETs
p.821

Performance of SiC Cascode Switches with Si MOS Gate
p.825

Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping
p.829

Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material
p.833

High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment
p.837

High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
p.841

Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices
p.845

Physical Simulation of Drain-Induced Barrier Lowering Effect in SiC MESFETs
p.849

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Field Effect Mobility in n-Channel Si Face 4H-SiC...

Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material

Abstract:

We report investigations of Si face 4H-SiC MOSFETs with aluminum ion implanted gate channels. High quality SiO2/SiC interface is obtained both when the gate oxide is grown on p-type epitaxial material and when grown on ion implanted regions. A peak field effect mobility of 170 cm2/Vs is extracted from transistors with epitaxially grown channel region of doping 5x1015 cm-3. Transistors with implanted gate channels with aluminum concentration of 1x1017 cm-3 exhibit peak field effect mobility of 108 cm2/Vs, while the mobility is 62 cm2/Vs for aluminum concentration of 5x1017 cm-3. The mobility reduction with increasing acceptor density follows the same functional relationship as in n-channel Si MOSFETs.