Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material

Abstract:

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We report investigations of Si face 4H-SiC MOSFETs with aluminum ion implanted gate channels. High quality SiO2/SiC interface is obtained both when the gate oxide is grown on p-type epitaxial material and when grown on ion implanted regions. A peak field effect mobility of 170 cm2/Vs is extracted from transistors with epitaxially grown channel region of doping 5x1015 cm-3. Transistors with implanted gate channels with aluminum concentration of 1x1017 cm-3 exhibit peak field effect mobility of 108 cm2/Vs, while the mobility is 62 cm2/Vs for aluminum concentration of 5x1017 cm-3. The mobility reduction with increasing acceptor density follows the same functional relationship as in n-channel Si MOSFETs.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

833-836

DOI:

10.4028/www.scientific.net/MSF.483-485.833

Citation:

G. Gudjónsson et al., "Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material", Materials Science Forum, Vols. 483-485, pp. 833-836, 2005

Online since:

May 2005

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$35.00

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