Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material

Abstract:

Article Preview

We report investigations of Si face 4H-SiC MOSFETs with aluminum ion implanted gate channels. High quality SiO2/SiC interface is obtained both when the gate oxide is grown on p-type epitaxial material and when grown on ion implanted regions. A peak field effect mobility of 170 cm2/Vs is extracted from transistors with epitaxially grown channel region of doping 5x1015 cm-3. Transistors with implanted gate channels with aluminum concentration of 1x1017 cm-3 exhibit peak field effect mobility of 108 cm2/Vs, while the mobility is 62 cm2/Vs for aluminum concentration of 5x1017 cm-3. The mobility reduction with increasing acceptor density follows the same functional relationship as in n-channel Si MOSFETs.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

833-836

Citation:

G. Gudjónsson et al., "Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material", Materials Science Forum, Vols. 483-485, pp. 833-836, 2005

Online since:

May 2005

Export:

Price:

$38.00

[1] D. Peters, R. Schörner, P. Friedrichs, and D. Stephani: Mater. Sci. Forum Vol. 433-436 (2003), p.769.

[2] S. -H. Ryu, A. Agarwal, J. Richmond, J. Palmour, N. Saks, and J. Williams: IEEE Electr. Dev. Lett. Vol. 23 (2002), p.321.

[3] S. -H. Ryu, A. Agarwal, J. Richmond, and J. Palmour: Mater. Sci. Forum Vol. 457-460 (2004), p.1385.

[4] H.Ö. Ólafsson: Ph. D. thesis, Chalmers University of Technology, Göteborg, Sweden, (2004).

[5] S. Takagi, A. Toriumi, M. Iwase, and H. Tango: IEEE Trans. Electr. Dev. Vol. 41 (1994), p.2357.

[6] D.K. Schroder: Semiconductor material and device characterization, (1998).

[5] Fig. 5. Normalized mobility as a function of the acceptor concentration in the channel region of Si MOSFETs.

[5] and SiC MOSFETs. The broken line is a best fit to the Si data.