Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material
We report investigations of Si face 4H-SiC MOSFETs with aluminum ion implanted gate channels. High quality SiO2/SiC interface is obtained both when the gate oxide is grown on p-type epitaxial material and when grown on ion implanted regions. A peak field effect mobility of 170 cm2/Vs is extracted from transistors with epitaxially grown channel region of doping 5x1015 cm-3. Transistors with implanted gate channels with aluminum concentration of 1x1017 cm-3 exhibit peak field effect mobility of 108 cm2/Vs, while the mobility is 62 cm2/Vs for aluminum concentration of 5x1017 cm-3. The mobility reduction with increasing acceptor density follows the same functional relationship as in n-channel Si MOSFETs.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
G. Gudjónsson et al., "Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material", Materials Science Forum, Vols. 483-485, pp. 833-836, 2005