High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment

Fredrik Allerstam; G. Gudjónsson; H.Ö. Ólafsson; E.Ö. Sveinbjörnsson; T. Rödle; R. Jos

doi:10.4028/www.scientific.net/MSF.483-485.837

Paper Titles

Short-Channel Effects in 4H-SiC MOSFETs
p.821

Performance of SiC Cascode Switches with Si MOS Gate
p.825

Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping
p.829

Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material
p.833

High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment
p.837

High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
p.841

Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices
p.845

Physical Simulation of Drain-Induced Barrier Lowering Effect in SiC MESFETs
p.849

High Power Lateral Epitaxy MESFET Technology in Silicon Carbide
p.853

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High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment

Abstract:

Lateral inversion channel metal-oxide-semiconductor field-effect transistors (MOSFETs) were manufactured on 6H-SiC and two gate oxidation recipes were compared. In one case the gate oxide was grown in N2O using quartz environment. The resulting peak field-effect mobility was µFE=43 cm2/Vs. In the other case the gate oxide was grown in oxygen using alumina environment and the resulting peak field-effect mobility was µFE=130 cm2/Vs. Oxidizing in an environment made from sintered alumina introduces contaminants into the oxide that effect the oxidation in several^ways. The oxidation rate is increased and the resulting SiC/SiO2 interface allows higher inversion channel mobility.