Short-Channel Effects in 4H-SiC MOSFETs

Masato Noborio; Y. Kanzaki; Jun Suda; Tsunenobu Kimoto; Hiroyuki Matsunami

doi:10.4028/www.scientific.net/MSF.483-485.821

Paper Titles

4H-SiC Lateral RESURF MOSFETs on Carbon-Face Substrates
p.805

Dose Designing for High-Voltage 4H-SiC RESURF MOSFETs - Device Simulation and Fabrication
p.809

Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFET
p.813

Low On-Resistance in Normally-Off 4H-SiC Accumulation MOSFET
p.817

Short-Channel Effects in 4H-SiC MOSFETs
p.821

Performance of SiC Cascode Switches with Si MOS Gate
p.825

Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping
p.829

Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material
p.833

High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment
p.837

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Short-Channel Effects in 4H-SiC MOSFETs

Short-Channel Effects in 4H-SiC MOSFETs

Abstract:

Short-channel effects in SiC MOSFETs have been investigated. Planar MOSFETs with various channel lengths have been fabricated on p-type 4H-SiC (0001), (000-1) and (11-20) faces.^Short-channel effects such as punchthrough behavior, decrease of threshold voltage and deterioration of subthreshold characteristics are observed. Furthermore, the critical channel lengths below which short-channel effects occur are analyzed as a function of p-body doping and oxide thickness by using device simulation. The critical channel lengths in the fabricated SiC MOSFETs are in agreement with those obtained from the device simulation. The results are also in agreement with the empirical relationship for Si MOSFETs.