Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFET

Shinsuke Harada; Mitsuo Okamoto; Tsutomu Yatsuo; Kenji Fukuda; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.483-485.813

Paper Titles

4H-SiC DMOSFETs for High Speed Switching Applications
p.797

Realisation of Large Area 3C-SiC MOSFETs
p.801

4H-SiC Lateral RESURF MOSFETs on Carbon-Face Substrates
p.805

Dose Designing for High-Voltage 4H-SiC RESURF MOSFETs - Device Simulation and Fabrication
p.809

Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFET
p.813

Low On-Resistance in Normally-Off 4H-SiC Accumulation MOSFET
p.817

Short-Channel Effects in 4H-SiC MOSFETs
p.821

Performance of SiC Cascode Switches with Si MOS Gate
p.825

Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping
p.829

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Analysis of Low On-Resistance in 4H-SiC...

Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFET

Abstract:

In our previous study, the on-resistance of the SiC-based vertical MOSFET had been reduced in double-epitaxial MOSFET (DEMOSFET). The device exhibited an on-resistance (Rons) of 8.5 mWcm2 with a blocking voltage (Vbr) of 600 V. This study analyzed the characteristics of the DEMOSFET using a numerical simulation. The results showed the trade-off relationship between the specific on-resistance and the blocking characteristics when the concentration of the nitrogen ions increases in the surface of the n-type region between the p-wells. Specially, the specific on-resistance was drastically improved by increasing the concentration of the nitrogen ions. The thick gate oxide on the n-type region between the p-wells had an advantage to suppress the electric field in the gate oxide.