Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping
This paper reports on the degradation of inversion channel mobility of SiC MOSFET caused by the increase of channel doping. SiC MOSFETs were fabricated on three wafers, the doping concentrations of the epitaxial layer of which were 16 10 2× cm-3 (sample A), 17 10 2× cm-3 (sample B) and 17 10 4× cm-3 (sample C). The field effect mobility sharply decreases as the doping concentration increases. Hall mobility measurements have been done to investigate the degradation of the mobility due to doping. The measurement of sample A shows that, as a consequence of the decrease of the free carrier density due to MOS interface traps, the Hall mobility is as much as a factor of ten higher than the field effect mobility. In contrast, in regard to the measurement of sample B and sample C, we encountered unstable Hall voltage and could not obtain reproducible results. This implies that such high-density traps are generated that a channel disappears in the higher-doping samples.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
T. Hatakeyama et al., "Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping", Materials Science Forum, Vols. 483-485, pp. 829-832, 2005