Low Temperature Deposition of HfO2 Gate Insulator on SiC by Metalorganic Chemical Vapor Deposition

Abstract:

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Low temperature deposition of HfO2 films on 4H-SiC(0001) substrates by pulse introduced metalorganic chemical vapor deposition (MOCVD) using tetrakis-diethylamido-hafnium [Hf[N(C2H5)2]4, (TDEAH)] and H2O has been investigated. HfO2 films with relatively low leakage current density of 10-4 A/cm2 were obtained even at a deposition temperature as low as 190 °C. We demonstrate that the HfO2/SiC interface, where the HfO2 was deposited at 190 °C, has lower interface state density than a typical thermally-grown SiO2/SiC interface. It is also shown by X-ray photoelectron spectroscopy (XPS) that the HfO2/SiC structure fabricated at 190 °C has lower SiOx count than the HfO2/SiC structure fabricated at 400 °C.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1079-1082

DOI:

10.4028/www.scientific.net/MSF.527-529.1079

Citation:

S. Hino et al., "Low Temperature Deposition of HfO2 Gate Insulator on SiC by Metalorganic Chemical Vapor Deposition", Materials Science Forum, Vols. 527-529, pp. 1079-1082, 2006

Online since:

October 2006

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$35.00

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