Low Temperature Deposition of HfO2 Gate Insulator on SiC by Metalorganic Chemical Vapor Deposition

Shiro Hino; Tomohiro Hatayama; Naruhisa Miura; Tatsuo Ozeki; Eisuke Tokumitsu

doi:10.4028/www.scientific.net/MSF.527-529.1079

Paper Titles

Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs
p.1063

High Temperature Annealing Study of Al₂O₃ Deposited by ALCVD on n-Type 4H-SiC
p.1067

Experimental and First-Principles Studies of the Band Alignment at the HfO₂/4H-SiC (0001) Interface
p.1071

Structural and Morphological Properties of Ultrathin HfO₂ Dielectrics on 4H-SiC (0001)
p.1075

Low Temperature Deposition of HfO₂ Gate Insulator on SiC by Metalorganic Chemical Vapor Deposition
p.1079

Electrical Properties of the La₂O₃/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)₃ and H₂O
p.1083

Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics
p.1087

Preparation and Evaluation of Damage Free Surfaces on Silicon Carbide
p.1091

Selectivity and Residual Damage of Colloidal Silica Chemi-Mechanical Polishing of Silicon Carbide
p.1095

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Low Temperature Deposition of HfO₂ Gate Insulator on SiC by Metalorganic Chemical Vapor Deposition

Abstract:

Low temperature deposition of HfO2 films on 4H-SiC(0001) substrates by pulse introduced metalorganic chemical vapor deposition (MOCVD) using tetrakis-diethylamido-hafnium [Hf[N(C2H5)2]4, (TDEAH)] and H2O has been investigated. HfO2 films with relatively low leakage current density of 10-4 A/cm2 were obtained even at a deposition temperature as low as 190 °C. We demonstrate that the HfO2/SiC interface, where the HfO2 was deposited at 190 °C, has lower interface state density than a typical thermally-grown SiO2/SiC interface. It is also shown by X-ray photoelectron spectroscopy (XPS) that the HfO2/SiC structure fabricated at 190 °C has lower SiOx count than the HfO2/SiC structure fabricated at 400 °C.