Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility

Mitsuo Okamoto; Mieko Tanaka; Tsutomu Yatsuo; Kenji Fukuda

doi:10.4028/www.scientific.net/MSF.527-529.1301

Paper Titles

Fabrication and Performance of 1.2 kV, 12.9 mΩcm² 4H-SiC Epilayer Channel MOSFET
p.1285

Switching Characteristics of SiC-MOSFET and SBD Power Modules
p.1289

Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls
p.1293

The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates
p.1297

Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility
p.1301

Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs
p.1305

Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400°C) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace
p.1309

A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices
p.1313

Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs
p.1317

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Fabrication of 4H-SiC p-Channel MOSFET with High...

Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility

Abstract:

We have fabricated inversion-type p-channel MOSFETs on 4H-SiC substrates. In this paper, influences of gate oxidation process on the properties of p-channel MOSFETs were investigated. The gate oxide was formed under these three conditions: (i) dry oxidation, (ii) dry oxidation following wet re-oxidation, and (iii) wet oxidation. The C-V measurements of p-type 4H-SiC MOS capacitors revealed that wet oxidation process reduced the interface states near the valence band. The p-channel MOSFET with low interface states near the valence band indicated low threshold voltage (Vth), high field effect channel mobility (μFE) and low subthreshold swing (S). We obtained 4H-SiC p-channel MOSFET with high μFE of 15.6cm2/Vs by using wet oxidation as gate oxidation process.