Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400°C) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace

Abstract:

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A passivation annealing in nitric oxide (NO) ambient significantly reduces the interfacial defects of the SiO2/4H-SiC interface and improves the inversion MOS channel mobility. Effects of the nitridation in NO ambient become more pronounced at high temperatures in general. However, the maximum process temperature in a standard hot-wall oxidation furnace is restricted around 1200oC due to the softening point of quartz. Meanwhile, by use of a cold-wall oxidation furnace, high temperature and short time thermal processes become possible. In this study, we have developed an extremely high temperature (>1400oC) rapid thermal processing for the gate oxidation in the 4H-SiC DIMOSFET fabrication process. The peak MOS channel mobility of lateral MOSFETs on the DIMOSFET chip shows as high as 19cm2/Vs. The specific on-resistance of the device was 12.5mcm2 and the blocking voltage was 950V with gate shorted to the source.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1309-1312

DOI:

10.4028/www.scientific.net/MSF.527-529.1309

Citation:

R. Kosugi et al., "Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400°C) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace", Materials Science Forum, Vols. 527-529, pp. 1309-1312, 2006

Online since:

October 2006

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$35.00

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