Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400°C) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace

Ryouji Kosugi; Kenji Suzuki; Kazuto Takao; Yusuke Hayashi; Tsutomu Yatsuo; Kenji Fukuda; Hiromichi Ohashi; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.527-529.1309

Paper Titles

Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls
p.1293

The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates
p.1297

Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility
p.1301

Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs
p.1305

Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400°C) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace
p.1309

A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices
p.1313

Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs
p.1317

Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation
p.1321

Optimisation of 4H-SiC MOSFET Structures for Logic Applications
p.1325

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Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400°C) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace

Abstract:

A passivation annealing in nitric oxide (NO) ambient significantly reduces the interfacial defects of the SiO2/4H-SiC interface and improves the inversion MOS channel mobility. Effects of the nitridation in NO ambient become more pronounced at high temperatures in general. However, the maximum process temperature in a standard hot-wall oxidation furnace is restricted around 1200oC due to the softening point of quartz. Meanwhile, by use of a cold-wall oxidation furnace, high temperature and short time thermal processes become possible. In this study, we have developed an extremely high temperature (>1400oC) rapid thermal processing for the gate oxidation in the 4H-SiC DIMOSFET fabrication process. The peak MOS channel mobility of lateral MOSFETs on the DIMOSFET chip shows as high as 19cm2/Vs. The specific on-resistance of the device was 12.5mcm2 and the blocking voltage was 950V with gate shorted to the source.