Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1293-1296

DOI:

10.4028/www.scientific.net/MSF.527-529.1293

Citation:

H. Nakao et al., "Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls", Materials Science Forum, Vols. 527-529, pp. 1293-1296, 2006

Online since:

October 2006

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$35.00

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