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Paper Titles
High Power-Density 4H-SiC RF MOSFETs
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4.3 mΩcm2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET
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Fabrication and Performance of 1.2 kV, 12.9 mΩcm2 4H-SiC Epilayer Channel MOSFET
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Switching Characteristics of SiC-MOSFET and SBD Power Modules
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Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls
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The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates
p.1297
Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility
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Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs
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Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400°C) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace
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Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1293-1296

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1293

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Online since:

October 2006

Authors:

H. Nakao, Hideno Mikami, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki

Keywords:

Channel Mobility, Channel Plane, Trench Sidewall, UMOSFET

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

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[1120] 8r 0r (1120) (1120) �� � 8r off (0001) = substrate surface 13r 3r 85r � �(0001)

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[1120] � �� �

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[1120] 8r 0r (1120) (1120) �� � 8r off (0001) = substrate surface 13r 3r 85r � �(0001)

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[1]

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