4.3 mΩcm2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET

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The channel mobility in the SiC MOSFET degrades on the rough surface of the p-well formed by ion implantation. Recently, we have developed a double-epitaxial MOSFET (DEMOSFET), in which the p-well comprises two stacked epitaxially grown p-type layers and an n-type region between the p-wells is formed by ion implantation. This device exhibited a low on-resistance of 8.5 mcm2 with a blocking voltage of 600 V. In this study, to further improve the performance, we newly developed a device structure named implantation and epitaxial MOSFET (IEMOSFET). In this device, the p-well is formed by selective high-concentration p+ implantation followed by low-concentration p- epitaxial growth. The fabricated IEMOSFET with a buried channel exhibited superior characteristics to the DEMOSFET. The extremely low specific on-resistance of 4.3 mcm2 was achieved with a blocking voltage of 1100 V. This value is the lowest in the normally-off SiC MOSFETs.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1281-1284

Citation:

S. Harada et al., "4.3 mΩcm2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET", Materials Science Forum, Vols. 527-529, pp. 1281-1284, 2006

Online since:

October 2006

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$38.00

[1] M. K. Das, G. Y. Chang, J. R. Williams, N. S. Saks, L. A. Lipkin and J. W. Palmour: Mat. Sci. Forum, Vols. 389-393 (2002), p.981.

[2] M. A. Capano, J. A. Cooper Jr., M. R. Melloch, A. Saxler and W. C. Mitchel: J. Appl. Phys., Vol. 87 (2000), p.8773.

[3] S. Harada, M. Okamoto, T. Yatsuo, K. Adachi, K. Fukuda and K. Arai: IEEE Electron Device Lett., Vol. 25 (2004), p.292.

[4] S. Harada, M. Okamoto, T. Yatsuo, K. Adachi, K. Fukuda and K. Arai: Proceedings of ISPSD'04 (2004).