Optimum Design of Short-Channel 4H-SiC Power DMOSFETs

Abstract:

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We describe an optimized design for the 1 kV short-channel 4H-SiC power DMOSFET, obtained from numerical simulations using the Taguchi method. Three new structural features are employed: (1) a current spreading layer (CSL) below the p-well, (2) a heavily-doped, narrow JFET region, and (3) a segmented p-well contact.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1269-1272

DOI:

10.4028/www.scientific.net/MSF.527-529.1269

Citation:

A. Saha and J. A. Cooper, "Optimum Design of Short-Channel 4H-SiC Power DMOSFETs", Materials Science Forum, Vols. 527-529, pp. 1269-1272, 2006

Online since:

October 2006

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Price:

$35.00

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