Realization of Large Area Vertical 3C-SiC MOSFET Devices

Adolf Schöner; Mietek Bakowski; Per Ericsson; Helena Strömberg; Hiroyuki Nagasawa; Masayuki Abe

doi:10.4028/www.scientific.net/MSF.527-529.1273

Paper Titles

SiC Power MOSFETs – Status, Trends and Challenges
p.1255

Development of 8 mΩ-cm², 1.8 kV 4H-SiC DMOSFETs
p.1261

4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal
p.1265

Optimum Design of Short-Channel 4H-SiC Power DMOSFETs
p.1269

Realization of Large Area Vertical 3C-SiC MOSFET Devices
p.1273

High Power-Density 4H-SiC RF MOSFETs
p.1277

4.3 mΩcm², 1100 V 4H-SiC Implantation and Epitaxial MOSFET
p.1281

Fabrication and Performance of 1.2 kV, 12.9 mΩcm² 4H-SiC Epilayer Channel MOSFET
p.1285

Switching Characteristics of SiC-MOSFET and SBD Power Modules
p.1289

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Realization of Large Area Vertical 3C-SiC MOSFET Devices

Abstract:

Vertical DMOSFET devices with varying size from single cell to 3x3 mm2 large devices have been realized. The investigated devices had hexagonal and square unit cell designs with 2 $m and 4 $m channel length. The p-body was aluminum implanted and the source was nitrogen or phosphorus implanted. Low temperature Ti/W contacts were evaluated.