Realization of Large Area Vertical 3C-SiC MOSFET Devices
Vertical DMOSFET devices with varying size from single cell to 3x3 mm2 large devices have been realized. The investigated devices had hexagonal and square unit cell designs with 2 $m and 4 $m channel length. The p-body was aluminum implanted and the source was nitrogen or phosphorus implanted. Low temperature Ti/W contacts were evaluated.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
A. Schöner et al., "Realization of Large Area Vertical 3C-SiC MOSFET Devices", Materials Science Forum, Vols. 527-529, pp. 1273-1276, 2006