Realization of Large Area Vertical 3C-SiC MOSFET Devices

Abstract:

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Vertical DMOSFET devices with varying size from single cell to 3x3 mm2 large devices have been realized. The investigated devices had hexagonal and square unit cell designs with 2 $m and 4 $m channel length. The p-body was aluminum implanted and the source was nitrogen or phosphorus implanted. Low temperature Ti/W contacts were evaluated.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1273-1276

DOI:

10.4028/www.scientific.net/MSF.527-529.1273

Citation:

A. Schöner et al., "Realization of Large Area Vertical 3C-SiC MOSFET Devices", Materials Science Forum, Vols. 527-529, pp. 1273-1276, 2006

Online since:

October 2006

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Price:

$35.00

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