The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates

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This paper reports the channel mobilities of MOSFETs formed on the trench sidewalls with different crystal faces including (0001), (000-1), (1-100) and (0-33-8) using 4H-SiC (11-20) substrates. Deposited poly-Si was oxidized in wet ambient to form the gate oxide, and annealed in N2O (10%) ambient. The order of drain current of trench sidewall MOSFETs was (0-33-8) > (1-100) > (000-1) = (0001). We could gain comparatively high channel mobility on the (0-33-8) face. The maximum effective channel mobility (μeff) was 35cm2/Vs, and μeff at 2.5MV/cm was 29 cm2/Vs on the (0-33-8) face.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1297-1300

Citation:

H. Fujisawa et al., "The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates", Materials Science Forum, Vols. 527-529, pp. 1297-1300, 2006

Online since:

October 2006

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