The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates

Hiroyuki Fujisawa; Takashi Tsuji; Masaharu Nishiura

doi:10.4028/www.scientific.net/MSF.527-529.1297

Paper Titles

4.3 mΩcm², 1100 V 4H-SiC Implantation and Epitaxial MOSFET
p.1281

Fabrication and Performance of 1.2 kV, 12.9 mΩcm² 4H-SiC Epilayer Channel MOSFET
p.1285

Switching Characteristics of SiC-MOSFET and SBD Power Modules
p.1289

Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls
p.1293

The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates
p.1297

Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility
p.1301

Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs
p.1305

Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400°C) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace
p.1309

A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices
p.1313

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The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates

Abstract:

This paper reports the channel mobilities of MOSFETs formed on the trench sidewalls with different crystal faces including (0001), (000-1), (1-100) and (0-33-8) using 4H-SiC (11-20) substrates. Deposited poly-Si was oxidized in wet ambient to form the gate oxide, and annealed in N2O (10%) ambient. The order of drain current of trench sidewall MOSFETs was (0-33-8) > (1-100) > (000-1) = (0001). We could gain comparatively high channel mobility on the (0-33-8) face. The maximum effective channel mobility (μeff) was 35cm2/Vs, and μeff at 2.5MV/cm was 29 cm2/Vs on the (0-33-8) face.