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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Simulations of 10 kV Trench Gate IGBTs on 4H-SiC

Simulations of 10 kV Trench Gate IGBTs on 4H-SiC

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Silicon Carbide and Related Materials 2005

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1405-1408

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1405

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Online since:

October 2006

Authors:

Qing Chun Jon Zhang, Sei Hyung Ryu, Charlotte Jonas, Anant K. Agarwal, John W. Palmour

Keywords:

High Power, Power IGBTs, Trench Gate IGBTs

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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[1] B. J. Baliga, Power Semiconductor Devices, PWS Publication Company, Boston, 1995. pp.584-586.

[2] S. Ryu, S. Krishnaswami, A. Agarwal, J. Richmond, and J. Palmour: "Development of 10kV 4H-SiC power DMOSFETs," Mater. Sci. Forum Vols. 457-460 (2004) p.1385.

DOI: 10.4028/www.scientific.net/msf.457-460.1385

[3] I. A. Khan, J. A. Cooper, Jr., M. A. Capano, T. Isaacs-Smith, and J. R. Williams: "Highvoltage UMOSFETs in 4H-SiC," IEEE EDL, Vol. 23, No. 6, June 2002, pp.157-160.

DOI: 10.1109/ispsd.2002.1016195

[4] Q. Zhang, H-R. Chang, M. Gomez, C. Bui, E. Hanna, J. A. Higgins, T. Isaacs-Smith and J. R. Williams: "10kV Trench Gate IGBTs on 4H-SiC," ISPSD, Santa Barbara, CA, May 23-26, 2005, pp.303-306.

DOI: 10.1109/ispsd.2005.1488011

[5] E. Hanna, H.-R. Chang, R.V. Radun, Q. Zhang, M. Gomez, X. Li and C. Bui: "Static and dynamic characterization of 20A, 600V SiC MOS-enhanced JFET," Mater. Sci. Forum Vols. 457-460 (2004), p.1389

DOI: 10.4028/www.scientific.net/msf.457-460.1389