Simulations of 10 kV Trench Gate IGBTs on 4H-SiC

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1405-1408

DOI:

10.4028/www.scientific.net/MSF.527-529.1405

Citation:

Q. C. J. Zhang et al., "Simulations of 10 kV Trench Gate IGBTs on 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 1405-1408, 2006

Online since:

October 2006

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$35.00

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