A 1cm × 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules

Anant K. Agarwal; Sumi Krishnaswami; Ben Damsky; Jim Richmond; Craig Capell; John W. Palmour; Sei Hyung Ryu

doi:10.4028/www.scientific.net/MSF.527-529.1397

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A 1cm × 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules
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Simulations of 10 kV Trench Gate IGBTs on 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529A 1cm × 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for...

A 1cm × 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules

Abstract:

We report on the development of the first 1 cm x 1 cm SiC Thyristor chip capable of blocking 5 kV. This demonstrates the present quality of the SiC substrate and epitaxial material. A forward drop of 4.1 V at 100 A and 25°C has been measured. The turn-on delay is found to be a strong function of the gate current. At a gate current of 0.5 A, a turn-on delay of 250 ns is observed for an anode to cathode current of 200 A. The turn-on delay reduces to 72 ns for an IG = 1.5 A. The turn-on rise time is a strong function of the anode to cathode voltage, VAK. At VAK =230 V, the turn-on rise-time is 300 ns for IAK =200 A. The rise-time reduces to 26 ns for VAK = 500 V.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1397-1400

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1397

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Online since:

October 2006

Authors:

Anant K. Agarwal, Sumi Krishnaswami, Ben Damsky, Jim Richmond, Craig Capell, John W. Palmour, Sei Hyung Ryu

Keywords:

High Power, High Voltage (HV), Switch, Thyristor, Turn-On

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References

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