Advances in SiC GTO Development and Its Applications

Yoshitaka Sugawara

doi:10.4028/www.scientific.net/MSF.527-529.1391

Paper Titles

Investigation of Packaged High-Voltage 4H SiC pin Diodes in the 20-700 °C Temperature Range
p.1375

CM-Wave Modulator with High-Voltage 4H SiC pin Diodes
p.1379

Numerical Investigation of SiC Devices Performance Considering the Incomplete Dopant Ionization
p.1383

High Power Photoconductive Switch of 4H-SiC with Damage-Free Electrodes by Using n⁺-GaN Subcontact Layer
p.1387

Advances in SiC GTO Development and Its Applications
p.1391

A 1cm × 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules
p.1397

Simulation of High-Voltage Injection-Enhanced 4H-SiC N-Channel IGBTs with Forward Drop Approaching that of a PiN Junction Rectifier
p.1401

Simulations of 10 kV Trench Gate IGBTs on 4H-SiC
p.1405

Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs
p.1409

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Advances in SiC GTO Development and Its Applications

Abstract:

To achieve large current capability in spite of present small SiC devices that are limited by various crystal defects, focus was placed on SiC GTO thyristor and SICGT have been developed as an advanced SiC GTO. SICGTs with current capability of 1.6-100 A and blocking voltage of 3-12.7 kV and a 3 phase PWM SICGT inverter with output power of 35 kVA have been successfully developed. Furthermore, application of the SiC inverter aimed to a load leveling system was demonstrated.