Advances in SiC GTO Development and Its Applications
To achieve large current capability in spite of present small SiC devices that are limited by various crystal defects, focus was placed on SiC GTO thyristor and SICGT have been developed as an advanced SiC GTO. SICGTs with current capability of 1.6-100 A and blocking voltage of 3-12.7 kV and a 3 phase PWM SICGT inverter with output power of 35 kVA have been successfully developed. Furthermore, application of the SiC inverter aimed to a load leveling system was demonstrated.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Y. Sugawara "Advances in SiC GTO Development and Its Applications", Materials Science Forum, Vols. 527-529, pp. 1391-1396, 2006