Advances in SiC GTO Development and Its Applications

Abstract:

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To achieve large current capability in spite of present small SiC devices that are limited by various crystal defects, focus was placed on SiC GTO thyristor and SICGT have been developed as an advanced SiC GTO. SICGTs with current capability of 1.6-100 A and blocking voltage of 3-12.7 kV and a 3 phase PWM SICGT inverter with output power of 35 kVA have been successfully developed. Furthermore, application of the SiC inverter aimed to a load leveling system was demonstrated.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1391-1396

DOI:

10.4028/www.scientific.net/MSF.527-529.1391

Citation:

Y. Sugawara "Advances in SiC GTO Development and Its Applications", Materials Science Forum, Vols. 527-529, pp. 1391-1396, 2006

Online since:

October 2006

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Price:

$35.00

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