Simulation of High-Voltage Injection-Enhanced 4H-SiC N-Channel IGBTs with Forward Drop Approaching that of a PiN Junction Rectifier

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For SiC devices capable of blocking very high voltages (>4kV), it becomes imperative to use bipolar devices because of unacceptably large on-state losses of unipolar devices. The IGBT offers the potential for high current density operation and ease of turn off using a MOS gate structure. In this work, 15kV 4H-SiC n-channel UMOS PT (Punch Through) IGBTs with injection enhancement effect near the top emitter and transparent pemitter structure at the collector have been demonstrated to have a forward drop approaching that of a PiN junction rectifier. With proper design, a PiN-like carrier distribution in the drift region can be achieved, which allows a better trade-off between collector-emitter saturation voltage (VCE(sat)) and turn-off loss (Eoff) than conventional SiC UMOS IGBTs.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1401-1404

Citation:

L. Zhu and T. P. Chow, "Simulation of High-Voltage Injection-Enhanced 4H-SiC N-Channel IGBTs with Forward Drop Approaching that of a PiN Junction Rectifier", Materials Science Forum, Vols. 527-529, pp. 1401-1404, 2006

Online since:

October 2006

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$38.00

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