1836 V, 4.7 mΩ•cm2 High Power 4H-SiC Bipolar Junction Transistor

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This paper reports recent progress in the development of high power 4H-SiC BJTs based on an improved device design and fabrication scheme. Near theoretical limit high blocking voltage of VCEO=1,836 V has been achieved for 4H-SiC BJTs based on a drift layer of only 12 μm, doped to 6.7x1015 cm-3. The collector current measured for a single cell BJT with an active area of 0.61 mm2 is up to IC=9.87 A (JC=1618 A/cm2). The collector current is 7.64 A (JC=1252 A/cm2) at VCE=5.9 V in the saturation region, corresponding to an absolute specific on-resistance (RSP_ON) of 4.7 m9·cm2. From VCE=2.4 V to VCE= 5.8 V, the BJT has a differential RSP_ON of only 3.9 m9·cm2. The current gain is about 8.8 at Ic=5.3 A (869 A/cm2). This 4H-SiC BJT shows a V2/RSP_ON of 717 MW/cm2, which is the highest value reported to date for high-voltage and high-current 4H-SiC BJTs. A verylarge area 4H-SiC BJT with an active area of 11.3 mm2 is also demonstrated.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1417-1420

Citation:

J. H. Zhang et al., "1836 V, 4.7 mΩ•cm2 High Power 4H-SiC Bipolar Junction Transistor", Materials Science Forum, Vols. 527-529, pp. 1417-1420, 2006

Online since:

October 2006

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$38.00

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[1] [2] [3] [4] [5] [6] [7] Time (s) Ic (A).

[50] 100 150 200 250 300 350 Vc (V) 20ns 25°C 275°C VC [V] IC [A].

[1] [2] [3] [4] [5] [6] [7] Time (s) Ic (A).

[50] 100 150 200 250 300 350 Vc (V) 20ns 25°C 275°C VC [V] IC [A].

[1] [2] [3] [4] [5] [6] [7] Time (s) IC (A).

[50] 100 150 200 250 300 350 VC (V) 20ns 275°C 25°C VC [V] IC [A].

[1] [2] [3] [4] [5] [6] [7] Time (s) IC (A).

[50] 100 150 200 250 300 350 VC (V) 20ns 275°C 25°C VC [V] IC [A] Fig. 6. a) Turn-on and b) turn-off transients of the SiC BJT under 300 V, 5 A inductive load at room temperature and 275°C. a) b).

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