Current Gain Dependence on Emitter Width in 4H-SiC BJTs

Martin Domeij; Hyung Seok Lee; Carl Mikael Zetterling; Mikael Östling; Adolf Schöner

doi:10.4028/www.scientific.net/MSF.527-529.1425

Paper Titles

Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs
p.1409

First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs
p.1413

1836 V, 4.7 mΩ•cm² High Power 4H-SiC Bipolar Junction Transistor
p.1417

4H-SiC Bipolar Transistors with UHF and L-Band Operation
p.1421

Current Gain Dependence on Emitter Width in 4H-SiC BJTs
p.1425

Optimization of the Specific On-Resistance of 4H-SiC BJTs
p.1429

Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors
p.1433

High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
p.1437

Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs
p.1441

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Current Gain Dependence on Emitter Width in 4H-SiC BJTs

Abstract:

This paper reports the fabrication of epitaxial 4H-SiC bipolar junction transistors (BJTs) with a maximum current gain β=64 and a breakdown voltage of 1100 V. The high β value is attributed to high material quality obtained after a continuous epitaxial growth of the base-emitter junction. The current gain of the BJTs increases with increasing emitter width indicating a significant influence of surface recombination. This “emitter-size” effect is in good agreement with device simulations including recombination in interface states at the etched termination of the baseemitter junction.