Current Gain Dependence on Emitter Width in 4H-SiC BJTs

Abstract:

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This paper reports the fabrication of epitaxial 4H-SiC bipolar junction transistors (BJTs) with a maximum current gain β=64 and a breakdown voltage of 1100 V. The high β value is attributed to high material quality obtained after a continuous epitaxial growth of the base-emitter junction. The current gain of the BJTs increases with increasing emitter width indicating a significant influence of surface recombination. This “emitter-size” effect is in good agreement with device simulations including recombination in interface states at the etched termination of the baseemitter junction.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1425-1428

DOI:

10.4028/www.scientific.net/MSF.527-529.1425

Citation:

M. Domeij et al., "Current Gain Dependence on Emitter Width in 4H-SiC BJTs", Materials Science Forum, Vols. 527-529, pp. 1425-1428, 2006

Online since:

October 2006

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Price:

$35.00

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