Current Gain Dependence on Emitter Width in 4H-SiC BJTs
This paper reports the fabrication of epitaxial 4H-SiC bipolar junction transistors (BJTs) with a maximum current gain β=64 and a breakdown voltage of 1100 V. The high β value is attributed to high material quality obtained after a continuous epitaxial growth of the base-emitter junction. The current gain of the BJTs increases with increasing emitter width indicating a significant influence of surface recombination. This “emitter-size” effect is in good agreement with device simulations including recombination in interface states at the etched termination of the baseemitter junction.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
M. Domeij et al., "Current Gain Dependence on Emitter Width in 4H-SiC BJTs", Materials Science Forum, Vols. 527-529, pp. 1425-1428, 2006