Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs

Abstract:

Article Preview

For 1-kV, 30-A 4H-SiC epitaxial emitter npn bipolar junction transistors, the dependence of the common-emitter current gain β on the collector current IC were measured at elevated temperatures. The collector-emitter voltage was fixed (at 100 V voltage) to provide an active operation mode at all collector currents varying in a wide range from 150 mA to 40 A (current densities 24 - 6350 A/cm2). The maximum room temperature current gain was measured to be βmax = 40 (IC = 7 A) while βmax = 32 (IC = 10 A) at 250oC. The β-IC dependences were simulated using a model which takes into account the main processes affecting the current gain. Minority carrier lifetimes and surface recombination velocity were obtained by means of those considerations.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1441-1444

DOI:

10.4028/www.scientific.net/MSF.527-529.1441

Citation:

P. A. Ivanov et al., "Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs", Materials Science Forum, Vols. 527-529, pp. 1441-1444, 2006

Online since:

October 2006

Export:

Price:

$35.00

In order to see related information, you need to Login.