Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs

Pavel A. Ivanov; Michael E. Levinshtein; Anant K. Agarwal; Sumi Krishnaswami; John W. Palmour

doi:10.4028/www.scientific.net/MSF.527-529.1441

Paper Titles

Current Gain Dependence on Emitter Width in 4H-SiC BJTs
p.1425

Optimization of the Specific On-Resistance of 4H-SiC BJTs
p.1429

Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors
p.1433

High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
p.1437

Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs
p.1441

400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200°C Baseplate Temperature
p.1445

Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices
p.1449

Novel Power Si/4H-SiC Heterojunction Tunneling Transistor (HETT)
p.1453

SiC-Based MOSFETs for Harsh Environment Emissions Sensors
p.1457

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Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs

Abstract:

For 1-kV, 30-A 4H-SiC epitaxial emitter npn bipolar junction transistors, the dependence of the common-emitter current gain β on the collector current IC were measured at elevated temperatures. The collector-emitter voltage was fixed (at 100 V voltage) to provide an active operation mode at all collector currents varying in a wide range from 150 mA to 40 A (current densities 24 - 6350 A/cm2). The maximum room temperature current gain was measured to be βmax = 40 (IC = 7 A) while βmax = 32 (IC = 10 A) at 250oC. The β-IC dependences were simulated using a model which takes into account the main processes affecting the current gain. Minority carrier lifetimes and surface recombination velocity were obtained by means of those considerations.