Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors

Abstract:

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The performance prospects for 4H-SiC Bipolar Junction Transistors (BJTs) and Insulated Gate Bipolar Transistors (IGBTs) are theoretically evaluated. The total power dissipated (Ptotal) for both devices is calculated as a function of lifetime in the drift region and blocking voltage and used as a figure of merit to compare and contrast the effectiveness of different semiconductor materials for bipolar device applications. Assuming a maximum of 300W/cm2 for the total permissible power dissipation due to heat sink constraints we estimate an upper limit of 5kV for SiC BJT operation.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1433-1436

DOI:

10.4028/www.scientific.net/MSF.527-529.1433

Citation:

S. Balachandran et al., "Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors", Materials Science Forum, Vols. 527-529, pp. 1433-1436, 2006

Online since:

October 2006

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Price:

$35.00

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