Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors

S. Balachandran; T. Paul Chow; Anant K. Agarwal

doi:10.4028/www.scientific.net/MSF.527-529.1433

Paper Titles

1836 V, 4.7 mΩ•cm² High Power 4H-SiC Bipolar Junction Transistor
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4H-SiC Bipolar Transistors with UHF and L-Band Operation
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Current Gain Dependence on Emitter Width in 4H-SiC BJTs
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Optimization of the Specific On-Resistance of 4H-SiC BJTs
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Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors
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High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
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Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs
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400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200°C Baseplate Temperature
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Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices
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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Performance Assessment of 4H-SiC Bipolar Junction...

Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors

Abstract:

The performance prospects for 4H-SiC Bipolar Junction Transistors (BJTs) and Insulated Gate Bipolar Transistors (IGBTs) are theoretically evaluated. The total power dissipated (Ptotal) for both devices is calculated as a function of lifetime in the drift region and blocking voltage and used as a figure of merit to compare and contrast the effectiveness of different semiconductor materials for bipolar device applications. Assuming a maximum of 300W/cm2 for the total permissible power dissipation due to heat sink constraints we estimate an upper limit of 5kV for SiC BJT operation.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1433-1436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1433

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Online since:

October 2006

Authors:

S. Balachandran, T. Paul Chow, Anant K. Agarwal

Keywords:

4H-SiC, Bipolar Junction Transistor (BJT), Figure of Merit (FOM), Insulated Gate Bipolar Transistor, Power Dissipation

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References

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