Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors
The performance prospects for 4H-SiC Bipolar Junction Transistors (BJTs) and Insulated Gate Bipolar Transistors (IGBTs) are theoretically evaluated. The total power dissipated (Ptotal) for both devices is calculated as a function of lifetime in the drift region and blocking voltage and used as a figure of merit to compare and contrast the effectiveness of different semiconductor materials for bipolar device applications. Assuming a maximum of 300W/cm2 for the total permissible power dissipation due to heat sink constraints we estimate an upper limit of 5kV for SiC BJT operation.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
S. Balachandran et al., "Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors", Materials Science Forum, Vols. 527-529, pp. 1433-1436, 2006