Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors

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The performance prospects for 4H-SiC Bipolar Junction Transistors (BJTs) and Insulated Gate Bipolar Transistors (IGBTs) are theoretically evaluated. The total power dissipated (Ptotal) for both devices is calculated as a function of lifetime in the drift region and blocking voltage and used as a figure of merit to compare and contrast the effectiveness of different semiconductor materials for bipolar device applications. Assuming a maximum of 300W/cm2 for the total permissible power dissipation due to heat sink constraints we estimate an upper limit of 5kV for SiC BJT operation.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1433-1436

Citation:

S. Balachandran et al., "Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors", Materials Science Forum, Vols. 527-529, pp. 1433-1436, 2006

Online since:

October 2006

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$38.00

[1] A. Bhalla and T.P. Chow: ISPSD (1994), p.287.

[2] R. Tyagi and T.P. Chow: ISPSD (1993), p.84.

[3] T.P. Chow: Handbook of Thin Film Devices (Academic Press, 2000), Vol. 1, Chapter 7.

[4] B. J. Baliga: Power Semiconductor Devices (PWS Publishing Co. Boston, MA, 1996).

[5] Y. Tang: High voltage implanted-emitter bipolar junction transistors and Darlington transistors in 4H-SiC (Rensselaer Polytechnic Institute, PhD Thesis, 2003).

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