Co-Doping of Er-Doped SiC with Oxygen – A Promising Way Towards Efficient 1540 nm Emission at Room Temperature?

Uwe Gerstmann; E. Rauls; S. Sanna; Thomas Frauenheim; Harald Overhof

doi:10.4028/www.scientific.net/MSF.527-529.655

Paper Titles

In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC Substrates
p.637

Electronic Structure and Magnetic Properties of Transition Metal Doped Silicon Carbide in Different Polytypes
p.641

The Optical Admittance Spectroscopy of the Vanadium Donor and Acceptor Levels in Semi-Insulating 4H-SiC and 6H-SiC
p.647

Luminescence and EPR Characterization of Vanadium Doped Semi-Insulating 4H SiC
p.651

Co-Doping of Er-Doped SiC with Oxygen – A Promising Way Towards Efficient 1540 nm Emission at Room Temperature?
p.655

Europium Induced Deep Levels in Hexagonal Silicon Carbide
p.659

Cathodoluminescence Measurements and Thermal Activation of Rare Earth Doped (Tb³⁺, Dy³⁺ and Eu³⁺) a-SiC Thin Films Prepared by rf Magnetron Sputtering
p.663

Hydrogen Nanochemistry Achieving Clean and Pre-Oxidized Silicon Carbide Surface Metallization
p.667

Temperature Induced Phase Transformation on the 4H-SiC(11-20) Surface
p.673

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Co-Doping of Er-Doped SiC with Oxygen – A Promising Way Towards Efficient 1540 nm Emission at Room Temperature?

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Silicon Carbide and Related Materials 2005

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Materials Science Forum (Volumes 527-529)

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655-658

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https://doi.org/10.4028/www.scientific.net/MSF.527-529.655

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Online since:

October 2006

Authors:

Uwe Gerstmann, E. Rauls, S. Sanna, Thomas Frauenheim, Harald Overhof

Keywords:

3C-SiC, Density Function Theory (DFT), Oxygen, Rare Earth Ion, Room Temperature Emission

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