In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC Substrates

Margareta K. Linnarsson; Martin S. Janson; Urban Forsberg; Erik Janzén

doi:10.4028/www.scientific.net/MSF.527-529.637

Paper Titles

Kinetic Mechanisms for the Deactivation of Nitrogen in SiC
p.621

Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition
p.625

Accurate CsM⁺ SIMS Aluminum Dopant Profiling in SiC
p.629

Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method
p.633

In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC Substrates
p.637

Electronic Structure and Magnetic Properties of Transition Metal Doped Silicon Carbide in Different Polytypes
p.641

The Optical Admittance Spectroscopy of the Vanadium Donor and Acceptor Levels in Semi-Insulating 4H-SiC and 6H-SiC
p.647

Luminescence and EPR Characterization of Vanadium Doped Semi-Insulating 4H SiC
p.651

Co-Doping of Er-Doped SiC with Oxygen – A Promising Way Towards Efficient 1540 nm Emission at Room Temperature?
p.655

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In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC Substrates

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Silicon Carbide and Related Materials 2005

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Materials Science Forum (Volumes 527-529)

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637-640

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.637

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Online since:

October 2006

Authors:

Margareta K. Linnarsson, Martin S. Janson, Urban Forsberg, Erik Janzén

Keywords:

Deuterium, Diffusion, SIMS

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References

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