Accurate CsM+ SIMS Aluminum Dopant Profiling in SiC

Howard E. Smith; Bang Hung Tsao; James D. Scofield

doi:10.4028/www.scientific.net/MSF.527-529.629

Paper Titles

Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates
p.613

Evaluating and Improving SIMS Method for Measuring Nitrogen in SiC
p.617

Kinetic Mechanisms for the Deactivation of Nitrogen in SiC
p.621

Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition
p.625

Accurate CsM⁺ SIMS Aluminum Dopant Profiling in SiC
p.629

Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method
p.633

In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC Substrates
p.637

Electronic Structure and Magnetic Properties of Transition Metal Doped Silicon Carbide in Different Polytypes
p.641

The Optical Admittance Spectroscopy of the Vanadium Donor and Acceptor Levels in Semi-Insulating 4H-SiC and 6H-SiC
p.647

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Accurate CsM⁺ SIMS Aluminum Dopant Profiling in SiC

Abstract:

The accuracy of Secondary Ion Mass Spectrometry (SIMS) depth profiles of aluminum (Al) dopant in silicon carbide (SiC) has been investigated. The Al SIMS profile differs in shape depending on whether it was obtained using a cesium (Cs+) or oxygen (O2 +) primary ion beam, and depends in the former case on which secondary ion is followed. The matrix signals indicate that the CsAl+ secondary ion yield changes during the Cs+ depth profile, probably because of the work function lowering due to the previously-implanted Al. These same matrix ion signals are used for a depth-dependent empirical correction to increase the accuracy of the Al concentration profile. The physics of these phenomena and the accuracy of the correction are discussed.