Accurate CsM+ SIMS Aluminum Dopant Profiling in SiC

Abstract:

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The accuracy of Secondary Ion Mass Spectrometry (SIMS) depth profiles of aluminum (Al) dopant in silicon carbide (SiC) has been investigated. The Al SIMS profile differs in shape depending on whether it was obtained using a cesium (Cs+) or oxygen (O2 +) primary ion beam, and depends in the former case on which secondary ion is followed. The matrix signals indicate that the CsAl+ secondary ion yield changes during the Cs+ depth profile, probably because of the work function lowering due to the previously-implanted Al. These same matrix ion signals are used for a depth-dependent empirical correction to increase the accuracy of the Al concentration profile. The physics of these phenomena and the accuracy of the correction are discussed.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

629-632

DOI:

10.4028/www.scientific.net/MSF.527-529.629

Citation:

H. E. Smith et al., "Accurate CsM+ SIMS Aluminum Dopant Profiling in SiC", Materials Science Forum, Vols. 527-529, pp. 629-632, 2006

Online since:

October 2006

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Price:

$35.00

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