Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

Sylvie Contreras; Marcin Zielinski; Leszek Konczewicz; Caroline Blanc; Sandrine Juillaguet; Ralf Müller; Ulrike Künecke; Peter J. Wellmann; Jean Camassel

doi:10.4028/www.scientific.net/MSF.527-529.633

Paper Titles

Evaluating and Improving SIMS Method for Measuring Nitrogen in SiC
p.617

Kinetic Mechanisms for the Deactivation of Nitrogen in SiC
p.621

Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition
p.625

Accurate CsM⁺ SIMS Aluminum Dopant Profiling in SiC
p.629

Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method
p.633

In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC Substrates
p.637

Electronic Structure and Magnetic Properties of Transition Metal Doped Silicon Carbide in Different Polytypes
p.641

The Optical Admittance Spectroscopy of the Vanadium Donor and Acceptor Levels in Semi-Insulating 4H-SiC and 6H-SiC
p.647

Luminescence and EPR Characterization of Vanadium Doped Semi-Insulating 4H SiC
p.651

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Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

Abstract:

We report on investigation of p-type doped, SiC wafers grown by the Modified- Physical Vapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 1018 to 1020 cm-3, with weak Ti concentration but large N compensation. To measure the wafers’ resistivity, carrier concentration and mobility, temperature-dependant Hall effect measurements have been made in the range 100-850 K using the Van der Pauw method. The temperature dependence of the mobility suggests higher Al concentration, and higher compensation, than estimated from SIMS. Additional LTPL measurements show no evidence of additional impurities in the range of investigation, but suggest that the additional compensation may come from an increased concentration of non-radiative centers.