Correlation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon Carbide

Abstract:

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A room temperature PL mapping technique was applied to establish the origin of resistivity variation in PVT-grown 6H SiC substrates. A direct correlation between the native defect-related PL and resistivity was found in undoped (V-free) samples. In vanadium-doped samples with low vanadium content, the resistivity showed a good correlation with the total PL signal consisting of contributions from both vanadium and native point defects. Well-known UD1 and UD3 levels were revealed by low-temperature PL spectroscopy. Some correlation was observed between these low-temperature PL signatures and the resistivity distribution.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

717-720

DOI:

10.4028/www.scientific.net/MSF.527-529.717

Citation:

S. K. Chanda et al., "Correlation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon Carbide", Materials Science Forum, Vols. 527-529, pp. 717-720, 2006

Online since:

October 2006

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Price:

$35.00

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