Correlation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon Carbide

Sashi Kumar Chanda; Yaroslav Koshka; Murugesu Yoganathan

doi:10.4028/www.scientific.net/MSF.527-529.717

Paper Titles

Precise Determination of Thermal Expansion Coefficients Observed in 4H-SiC Single Crystals
p.699

Thermal Lens Technique for the Determination of SiC Thermo-Optical Properties
p.703

Wannier-Stark Ladder and Negative Differential Conductance in 4H-SiC
p.707

Characterization of SiC Wafers by Photoluminescence Mapping
p.711

Correlation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon Carbide
p.717

Simple, Calibrated Analysis and Mapping of SiC Wafer Defects by Birefringence Imaging
p.721

SiC Substrate Doping Profiles Using Commercial Optical Scanners
p.725

Characterization of SiC Substrates Using X-Ray Rocking Curve Mapping
p.729

Microwave Dielectric Loss Characterization of Silicon Carbide Wafers
p.733

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Correlation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon Carbide

Abstract:

A room temperature PL mapping technique was applied to establish the origin of resistivity variation in PVT-grown 6H SiC substrates. A direct correlation between the native defect-related PL and resistivity was found in undoped (V-free) samples. In vanadium-doped samples with low vanadium content, the resistivity showed a good correlation with the total PL signal consisting of contributions from both vanadium and native point defects. Well-known UD1 and UD3 levels were revealed by low-temperature PL spectroscopy. Some correlation was observed between these low-temperature PL signatures and the resistivity distribution.