Simple, Calibrated Analysis and Mapping of SiC Wafer Defects by Birefringence Imaging

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

721-724

Citation:

S. H. Park et al., "Simple, Calibrated Analysis and Mapping of SiC Wafer Defects by Birefringence Imaging", Materials Science Forum, Vols. 527-529, pp. 721-724, 2006

Online since:

October 2006

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[1] Yu.M. Tairov and V.F. Tsvetkov: J. Cryst. Growth 52 (1981), p.146.

[2] D.L. Barrett, R.G. Seidensticker, W. Gaida, R.H. Hopkins, and W.J. Choyke: J. Cryst. Growth 109 (1991), p.17.

[3] O.J. Glembocki, S.M. Prokes, R.E. Stahlbush and M.F. MacMillan: Journal of Electronic Materials, Vol. 34, No. 4, (2005), pp.382-0. 01.

[1] [10] [40] [70] [95] 99. 5.

[60] 70 80 90 100.

[60] 70 80 90 100.

[4] [8] [12] [16] [20] Bin Fig. 4. Twenty five 2-inch wafers were provided for comparing Gen-1 and Gen-2. Probability plot from Gen-2 shows better differentiation between samples. (a) By Generation-1 (b) By Generation-2 0. 01.

[1] [10] [40] [70] [95] 99. 5.

[60] 70 80 90 100.

[60] 70 80 90 100.

[4] [8] [12] [16] [20] Counts Bin Cumulative Counts Fig. 5. Birefringence-based defect variability measured on wafers from five 50 mm 6H-SiC boules.

[84] [88] [92] [96] 100 Defect Free Area (% of Wafer) Top of Boule Tow ard seed.

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