Fast Switch-Off of High Voltage 4H–SiC npn BJTs from Deep Saturation Mode
In this paper, very fast switch-off of high voltage 4H–SiC npn Bipolar Junction Transistors (BJTs) driven in deep saturation regime is reported. It is shown that the switch-off time can be as short as 4 ns if a reverse base current pulse is applied that provides forced minority carrier sweep out from the base.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
P. A. Ivanov et al., "Fast Switch-Off of High Voltage 4H–SiC npn BJTs from Deep Saturation Mode", Materials Science Forum, Vols. 645-648, pp. 1049-1052, 2010