Fast Switch-Off of High Voltage 4H–SiC npn BJTs from Deep Saturation Mode

Pavel A. Ivanov; Michael E. Levinshtein; John W. Palmour; Anant K. Agarwal; Q. Jon Zhang

doi:10.4028/www.scientific.net/MSF.645-648.1049

Paper Titles

2.2 kV SiC BJTs with Low V_CESAT Fast Switching and Short-Circuit Capability
p.1033

Experimental Study of Degradation in 4H-SiC BJTs by Means of Electrical Characterization and Electroluminescence
p.1037

Optical Insights into the Internal Electronic and Thermal Behavior of 4H-SiC Bipolar Devices
p.1041

A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of V_F, Current Saturation Capability and Fast Switching Speed
p.1045

Fast Switch-Off of High Voltage 4H–SiC npn BJTs from Deep Saturation Mode
p.1049

3kV 4H-SiC Thyristors for Pulsed Power Applications
p.1053

Operation of Silicon Carbide BJTs Free from Bipolar Degradation
p.1057

Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs
p.1061

Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT
p.1065

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Fast Switch-Off of High Voltage 4H–SiC npn BJTs from Deep Saturation Mode

Abstract:

In this paper, very fast switch-off of high voltage 4H–SiC npn Bipolar Junction Transistors (BJTs) driven in deep saturation regime is reported. It is shown that the switch-off time can be as short as 4 ns if a reverse base current pulse is applied that provides forced minority carrier sweep out from the base.