Fast Switch-Off of High Voltage 4H–SiC npn BJTs from Deep Saturation Mode

Abstract:

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In this paper, very fast switch-off of high voltage 4H–SiC npn Bipolar Junction Transistors (BJTs) driven in deep saturation regime is reported. It is shown that the switch-off time can be as short as 4 ns if a reverse base current pulse is applied that provides forced minority carrier sweep out from the base.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1049-1052

DOI:

10.4028/www.scientific.net/MSF.645-648.1049

Citation:

P. A. Ivanov et al., "Fast Switch-Off of High Voltage 4H–SiC npn BJTs from Deep Saturation Mode", Materials Science Forum, Vols. 645-648, pp. 1049-1052, 2010

Online since:

April 2010

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Price:

$35.00

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