3kV 4H-SiC Thyristors for Pulsed Power Applications

Ahmed Elasser; Peter A. Losee; Steve Arthur; Zachary Stum; Kevin Matocha; Greg Dunne; Jerome L. Garrett; Michael Schutten; Dale Brown

doi:10.4028/www.scientific.net/MSF.645-648.1053

Paper Titles

Experimental Study of Degradation in 4H-SiC BJTs by Means of Electrical Characterization and Electroluminescence
p.1037

Optical Insights into the Internal Electronic and Thermal Behavior of 4H-SiC Bipolar Devices
p.1041

A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of V_F, Current Saturation Capability and Fast Switching Speed
p.1045

Fast Switch-Off of High Voltage 4H–SiC npn BJTs from Deep Saturation Mode
p.1049

3kV 4H-SiC Thyristors for Pulsed Power Applications
p.1053

Operation of Silicon Carbide BJTs Free from Bipolar Degradation
p.1057

Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs
p.1061

Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT
p.1065

Performance of Silicon Carbide Avalanche Photodiode Arrays and Photomultipliers
p.1069

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3kV 4H-SiC Thyristors for Pulsed Power Applications

Abstract:

Due to the Silicon Carbide (SiC) material’s high electric field strength, wide bandgap, and good thermal conductivity, 4H-SiC thyristors are attractive candidates for pulsed power applications. With a thinner blocking layer almost an order of magnitude smaller than its Silicon (Si) counterpart, these devices promise very fast turn-on capabilities as full conductivity modulation occurs >10 times faster than comparable silicon thyristors, low leakage currents at high junction temperatures and at high voltage, and much lower forward voltage drop at high pulse currents. Our progress on the development of large area (4mm x 4mm) SiC thyristors is presented in this paper.