Performance of Silicon Carbide Avalanche Photodiode Arrays and Photomultipliers

Alexey V. Vert; Stanislav I. Soloviev; Peter M. Sandvik

doi:10.4028/www.scientific.net/MSF.645-648.1069

Paper Titles

3kV 4H-SiC Thyristors for Pulsed Power Applications
p.1053

Operation of Silicon Carbide BJTs Free from Bipolar Degradation
p.1057

Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs
p.1061

Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT
p.1065

Performance of Silicon Carbide Avalanche Photodiode Arrays and Photomultipliers
p.1069

Optical Properties of Antireflective Subwavelength Structures on 4H-SiC for UV Photodetectors
p.1073

Impact Ionization in 4H-SiC Nuclear Radiation Detectors
p.1077

Characterisation of Low Noise 4H-SiC Avalanche Photodiodes
p.1081

Fabrication and Characteristics of Micro Heaters Based on Polycrystalline 3C-SiC for High Temperature and Voltage
p.1085

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Performance of Silicon Carbide Avalanche Photodiode Arrays and Photomultipliers

Abstract:

We present recent results on 4H-SiC avalanche photodiode arrays and SiC-based solid-state photomultiplier arrays suitable for ultraviolet and solar-blind light detection. A novel SiC-based photomultiplier array was demonstrated. An additional solar-blind filter enabled a solar photon rejection ratio of more than 106 in combination with 40% quantum efficiency at 280 nm.