Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT

Taku Tajima; Tohru Nakamura; Y. Watabe; Masataka Satoh; Tadashi Nakamura

doi:10.4028/www.scientific.net/MSF.645-648.1065

Paper Titles

Fast Switch-Off of High Voltage 4H–SiC npn BJTs from Deep Saturation Mode
p.1049

3kV 4H-SiC Thyristors for Pulsed Power Applications
p.1053

Operation of Silicon Carbide BJTs Free from Bipolar Degradation
p.1057

Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs
p.1061

Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT
p.1065

Performance of Silicon Carbide Avalanche Photodiode Arrays and Photomultipliers
p.1069

Optical Properties of Antireflective Subwavelength Structures on 4H-SiC for UV Photodetectors
p.1073

Impact Ionization in 4H-SiC Nuclear Radiation Detectors
p.1077

Characterisation of Low Noise 4H-SiC Avalanche Photodiodes
p.1081

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Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT

Abstract:

In this paper, we demonstrate triple ion implanted 4H-SiC bipolar junction transistor (BJT) with etched extrinsic base regions. At the result of etching extrinsic base regions by mask of contact metals, maximum common emitter current gain was improved from 0.7 to 1.6.