Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT
In this paper, we demonstrate triple ion implanted 4H-SiC bipolar junction transistor (BJT) with etched extrinsic base regions. At the result of etching extrinsic base regions by mask of contact metals, maximum common emitter current gain was improved from 0.7 to 1.6.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
T. Tajima et al., "Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT", Materials Science Forum, Vols. 645-648, pp. 1065-1067, 2010