Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT

Abstract:

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In this paper, we demonstrate triple ion implanted 4H-SiC bipolar junction transistor (BJT) with etched extrinsic base regions. At the result of etching extrinsic base regions by mask of contact metals, maximum common emitter current gain was improved from 0.7 to 1.6.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1065-1067

DOI:

10.4028/www.scientific.net/MSF.645-648.1065

Citation:

T. Tajima et al., "Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT", Materials Science Forum, Vols. 645-648, pp. 1065-1067, 2010

Online since:

April 2010

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Price:

$35.00

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