A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed

Qing Chun Jon Zhang; Jim Richmond; Craig Capell; Anant K. Agarwal; John W. Palmour; Heather O'Brian; Charles Scozzie

doi:10.4028/www.scientific.net/MSF.645-648.1045

Paper Titles

SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter
p.1029

2.2 kV SiC BJTs with Low V_CESAT Fast Switching and Short-Circuit Capability
p.1033

Experimental Study of Degradation in 4H-SiC BJTs by Means of Electrical Characterization and Electroluminescence
p.1037

Optical Insights into the Internal Electronic and Thermal Behavior of 4H-SiC Bipolar Devices
p.1041

A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of V_F, Current Saturation Capability and Fast Switching Speed
p.1045

Fast Switch-Off of High Voltage 4H–SiC npn BJTs from Deep Saturation Mode
p.1049

3kV 4H-SiC Thyristors for Pulsed Power Applications
p.1053

Operation of Silicon Carbide BJTs Free from Bipolar Degradation
p.1057

Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs
p.1061

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO)...

A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of V_F, Current Saturation Capability and Fast Switching Speed

Abstract:

A novel power device configuration, the Bipolar Turn Off thyristor (BTO), was proposed and demonstrated in SiC. The BTO operates in anode switch configuration consisting of a 9 kV SiC p-type Gate Turn Off thyristor (GTO) and a 1600 V SiC n-type Bipolar Junction Transistor (BJT). Compared with SiC GTOs, several new features have been accomplished in the BTO: (1) A positive temperature coefficient of forward voltage drop, (2) Anode current saturation capability, and (3) A simple gate driver and fast switching speed.