A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed
A novel power device configuration, the Bipolar Turn Off thyristor (BTO), was proposed and demonstrated in SiC. The BTO operates in anode switch configuration consisting of a 9 kV SiC p-type Gate Turn Off thyristor (GTO) and a 1600 V SiC n-type Bipolar Junction Transistor (BJT). Compared with SiC GTOs, several new features have been accomplished in the BTO: (1) A positive temperature coefficient of forward voltage drop, (2) Anode current saturation capability, and (3) A simple gate driver and fast switching speed.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Q. C. J. Zhang et al., "A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed", Materials Science Forum, Vols. 645-648, pp. 1045-1048, 2010