A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed

Abstract:

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A novel power device configuration, the Bipolar Turn Off thyristor (BTO), was proposed and demonstrated in SiC. The BTO operates in anode switch configuration consisting of a 9 kV SiC p-type Gate Turn Off thyristor (GTO) and a 1600 V SiC n-type Bipolar Junction Transistor (BJT). Compared with SiC GTOs, several new features have been accomplished in the BTO: (1) A positive temperature coefficient of forward voltage drop, (2) Anode current saturation capability, and (3) A simple gate driver and fast switching speed.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1045-1048

DOI:

10.4028/www.scientific.net/MSF.645-648.1045

Citation:

Q. C. J. Zhang et al., "A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed", Materials Science Forum, Vols. 645-648, pp. 1045-1048, 2010

Online since:

April 2010

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$35.00

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