SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter

Hiroki Miyake; Tsunenobu Kimoto; Jun Suda

doi:10.4028/www.scientific.net/MSF.645-648.1029

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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648SiC Heterojunction Bipolar Transistors with...

SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter

Abstract:

In this study, new SiC-based heterojunction bipolar transistors (HBT) are proposed. An n-type AlN/GaN short-period superlattice (quasi-AlGaN) layer is grown on a SiC pn junction as a widegap emitter. By using quasi-AlGaN emitter, we have demonstrated successful control of band offset of AlGaN/SiC. Quasi-AlGaN/SiC HBT with an Al content over 0.5, which has no potential barrier to electron injection from an n-AlGaN emitter to a p-SiC base, exhibited a common-emitter current gain of β ~ 2.7, whereas the HBT with an Al content below 0.5 showed β ~ 0.1.

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Materials Science Forum (Volumes 645-648)

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1029-1032

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https://doi.org/10.4028/www.scientific.net/MSF.645-648.1029

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April 2010

Authors:

Hiroki Miyake, Tsunenobu Kimoto, Jun Suda

Keywords:

Band Offset, Common-Emitter Mode, Heterojunction

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