10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC
4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have been demonstrated for the first time. The SiC BJT (chip size: 0.75 cm2 with an active area of 0.336 cm2) conducts a collector current of 10 A (~ 30 A/cm2) with a forward voltage drop of 4.0 V (forced current gain βforced: 20) corresponding to a specific on-resistance of ~ 130 mΩ•cm2 at 25°C. The DC current gain, β, at a collector voltage of 15 V is measured to be 28 at a base current of 1 A. Both open emitter breakdown voltage (BVCBO) and open base breakdown voltage (BVCEO) of ~10 kV have been achieved. The 10 kV SiC Darlington transistor pair consists of a 10 A SiC BJT as the output device and a 1 A SiC BJT as the driver. The forward voltage drop of 4.5 V is measured at 10 A of collector current. The DC forced current gain at the collector voltage of 5.0 V was measured to be 440 at room temperature.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Q. C. J. Zhang et al., "10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 1025-1028, 2010