2.2 kV SiC BJTs with Low VCESAT Fast Switching and Short-Circuit Capability

Martin Domeij; Carina Zaring; Andrei O. Konstantinov; Muhammad Nawaz; Jan Olov Svedberg; Krister Gumaelius; Imre Keri; Anders Lindgren; Bo Hammarlund; Mikael Östling; Mats Reimark

doi:10.4028/www.scientific.net/MSF.645-648.1033

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HomeMaterials Science ForumMaterials Science Forum Vols. 645-6482.2 kV SiC BJTs with Low VCESAT Fast Switching and...

2.2 kV SiC BJTs with Low V_CESAT Fast Switching and Short-Circuit Capability

Abstract:

This paper reports large active area (15 mm2) 4H-SiC BJTs with a low VCESAT=0.6 V at IC=20 A (JC=133 A/cm2) and an open-base breakdown voltage BVCEO=2.3 kV at T=25 °C. The corresponding room temperature specific on-resistance RSP-ON=4.5 mΩcm2 is to the authors knowledge the lowest reported value for a large area SiC BJT blocking more than 2 kV. The on-state and blocking characteristics were analyzed by device simulation and found to be in good agreement with measurements. Fast switching with VCE rise- and fall-times in the range of 20-30 ns was demonstrated for a 6 A 1200 V rated SiC BJT. It was concluded that high dynamic base currents are essential for fast switching to charge the BJT parasitic base-collector capacitance. In addition, 10 μs short-circuit capability with VCE=800 V was shown for the 1200 V BJT.

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

1033-1036

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.1033

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Online since:

April 2010

Authors:

Martin Domeij, Carina Zaring, Andrei O. Konstantinov, Muhammad Nawaz, Jan Olov Svedberg, Krister Gumaelius, Imre Keri, Anders Lindgren, Bo Hammarlund, Mikael Östling, Mats Reimark

Keywords:

Bipolar Junction Transistor (BJT), Breakdown Voltage, Saturation Voltage

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References

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