Optical Insights into the Internal Electronic and Thermal Behavior of 4H-SiC Bipolar Devices

Dorothea Werber; Martin Aigner; Gerhard Wachutka

doi:10.4028/www.scientific.net/MSF.645-648.1041

Paper Titles

10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC
p.1025

SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter
p.1029

2.2 kV SiC BJTs with Low V_CESAT Fast Switching and Short-Circuit Capability
p.1033

Experimental Study of Degradation in 4H-SiC BJTs by Means of Electrical Characterization and Electroluminescence
p.1037

Optical Insights into the Internal Electronic and Thermal Behavior of 4H-SiC Bipolar Devices
p.1041

A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of V_F, Current Saturation Capability and Fast Switching Speed
p.1045

Fast Switch-Off of High Voltage 4H–SiC npn BJTs from Deep Saturation Mode
p.1049

3kV 4H-SiC Thyristors for Pulsed Power Applications
p.1053

Operation of Silicon Carbide BJTs Free from Bipolar Degradation
p.1057

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Optical Insights into the Internal Electronic and Thermal Behavior of 4H-SiC Bipolar Devices

Abstract:

Two different optical measurement techniques have been combined in one single experimental platform to provide detailed insight into the interior of 4H-SiC bipolar devices with respect to their coupled electronic and thermal behavior: First, free carrier absorption (FCA) measurements yield time-resolved electron and hole densities profiles during turn-on and under stationary conditions; and second, light deflection measurements provide information about the gradients of the electron and hole densities as well as that of the temperature gradient. The full measurement process is also simulated on the computer as “virtual experiment” on the basis of high-fidelity physical device models. Investigations on high-blocking 4H-SiC bipolar diodes exemplify the optical probing methodology and the numerical simulation.