Optical Insights into the Internal Electronic and Thermal Behavior of 4H-SiC Bipolar Devices

Abstract:

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Two different optical measurement techniques have been combined in one single experimental platform to provide detailed insight into the interior of 4H-SiC bipolar devices with respect to their coupled electronic and thermal behavior: First, free carrier absorption (FCA) measurements yield time-resolved electron and hole densities profiles during turn-on and under stationary conditions; and second, light deflection measurements provide information about the gradients of the electron and hole densities as well as that of the temperature gradient. The full measurement process is also simulated on the computer as “virtual experiment” on the basis of high-fidelity physical device models. Investigations on high-blocking 4H-SiC bipolar diodes exemplify the optical probing methodology and the numerical simulation.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1041-1044

DOI:

10.4028/www.scientific.net/MSF.645-648.1041

Citation:

D. Werber et al., "Optical Insights into the Internal Electronic and Thermal Behavior of 4H-SiC Bipolar Devices ", Materials Science Forum, Vols. 645-648, pp. 1041-1044, 2010

Online since:

April 2010

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$35.00

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