Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices

Liang Chun Yu; Kin P. Cheung; Greg Dunne; Kevin Matocha; John S. Suehle; Kuang Sheng

doi:10.4028/www.scientific.net/MSF.645-648.805

Paper Titles

4H-SiC Surface Morphology Etched Using ClF₃ Gas
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Influence of Negative Charging on High Rate SiC Etching for GaN HEMT MMICs
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Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride
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Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
p.799

Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
p.805

Model Calculations of SiC Oxide Growth Rate at Various Oxidation Temperatures Based on the Silicon and Carbon Emission Model
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In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures
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Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps
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Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy
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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Gate Oxide Long-Term Reliability of 4H-SiC MOS...

Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices

Abstract:

Reliability of the gate oxide on SiC is a pressing concern for deploying SiC MOS-based devices in real systems. While good projected oxide reliability was obtained recently under highly accelerated test conditions, indication that such projection may not be valid at lower operating fields was also reported. In this work, results from long-term TDDB stress (over 7 months) at 6 MV/cm and 300 °C on 4H-SiC MOS capacitors is reported. We confirm that lifetime projection from high-field data continues to be valid and no change in field acceleration factor is observed. The discrepancy between our results and the early prediction of poor reliability is examined.

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Materials Science Forum (Volumes 645-648)

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805-808

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.805

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Online since:

April 2010

Authors:

Liang Chun Yu, Kin P. Cheung, Greg Dunne, Kevin Matocha, John S. Suehle, Kuang Sheng

Keywords:

MOSFET, Reliability, Time-Dependent Dielectric Breakdown

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