In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures
We have investigated the oxidation process of SiC (000-1) C-face at low oxygen partial pressures using an in-situ spectroscopic ellipsometry. The oxide growth rate decreased steeply at the early stage of oxidation and then slowly decreased with increasing oxide thickness. The initial oxide growth rate was almost proportional to the oxygen partial pressure for both the polar directions. This result suggests that the initial interfacial reaction rate is constant regardless of the concentration of oxidants reaching the interface.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
K. Kouda et al., "In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures", Materials Science Forum, Vols. 645-648, pp. 813-816, 2010