In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures

Keiko Kouda; Yasuto Hijikata; Hiroyuki Yaguchi; Sadafumi Yoshida

doi:10.4028/www.scientific.net/MSF.645-648.813

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Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
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Model Calculations of SiC Oxide Growth Rate at Various Oxidation Temperatures Based on the Silicon and Carbon Emission Model
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In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures
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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648In Situ Spectroscopic Ellipsometry Study of SiC...

In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures

Abstract:

We have investigated the oxidation process of SiC (000-1) C-face at low oxygen partial pressures using an in-situ spectroscopic ellipsometry. The oxide growth rate decreased steeply at the early stage of oxidation and then slowly decreased with increasing oxide thickness. The initial oxide growth rate was almost proportional to the oxygen　partial　pressure for both the polar directions. This result suggests that the initial interfacial reaction rate is constant regardless of the concentration of oxidants reaching the interface.

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Materials Science Forum (Volumes 645-648)

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813-816

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https://doi.org/10.4028/www.scientific.net/MSF.645-648.813

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April 2010

Authors:

Keiko Kouda, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida

Keywords:

Ellipsometry, Oxidation Process, Si-C Emission Model

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References

[1] V. V. Afanas'ev, M. Bassler, G. Pensl, and M. Schultz: Phys. Stat. Sol. A Vo. 162 (1997), p.321.

Google Scholar

[2] K. Kakubari, R. Kuboki, Y. Hijikata, H. Yaguchi, and S. Yoshida: Mater. Sci. Forum Vols. 527-529 (2006), p.1031.

DOI: 10.4028/www.scientific.net/msf.527-529.1031

Google Scholar

[3] T. Yamamoto, Y. Hijikata, H. Yaguchi, and S. Yoshida: Jpn. J. Appl. Phys. Vol. 46 (2007), p. L770.

Google Scholar

[4] T. Yamamoto, Y. Hijikata, H. Yaguchi, and S. Yoshida: Jpn. J. Appl. Phys. Vol. 47 (2008), p.7803.

Google Scholar

[5] T. Yamamoto, Y. Hijikata, H. Yaguchi, and S. Yoshida: Mater. Sci. Forum Vols. 600-603 (2009), p.667.

Google Scholar

[6] Z. Zheng, R. E. Tressler, and K. E. Spear: J. Electronchem. Soc. Vol. 137 (1990), p.854.

Google Scholar

[7] B. E. Deal and A. S. Grove: J. Appl. Phys. Vol. 36 (1965), p.3770.

Google Scholar

[8] H. Z. Massoud and J. D. Plummer, J. Electrochem. Soc. Vol. 132 (1985), p.2685.

Google Scholar

[9] Y. Hijikata, H. Yaguchi, and S. Yoshida: Appl. Phys. Express Vol. 2 (2009), p.021203.

Google Scholar

[10] Y. Hijikata, H. Yaguchi, and S. Yoshida: Mater. Sci. Forum Vols, 615-617 (2009), p.489.

Google Scholar

[11] H. Kageshima, K. Shiraishi, and M. Uematsu: Jpn. J. Appl. Phys. Vol. 38 (1999), p. L971.

Google Scholar

[12] M. Uematsu, H. Kageshima, and K. Shiraishi; Jpn. J. Appl. Phys. Vol. 39 (2000), p. L952.

Google Scholar

[13] M. Uematsu, H. Kageshima, and K. Shiraishi; J. Appl. Phys. Vol. 89 (2001), p. (1948).

Google Scholar