Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices

Masato Noborio; Michael Grieb; Anton J. Bauer; Dethard Peters; Peter Friedrichs; Jun Suda; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.645-648.825

Paper Titles

Model Calculations of SiC Oxide Growth Rate at Various Oxidation Temperatures Based on the Silicon and Carbon Emission Model
p.809

In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures
p.813

Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps
p.817

Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy
p.821

Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices
p.825

Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC
p.829

Reliability of Thin Thermally Grown SiO₂ on 3C-SiC Studied by Scanning Probe Microscopy
p.833

Effects of Post-Deposition Annealing on CeO₂ Gate Prepared by Metal-Organic Decomposition (MOD) Method on 4H-SiC
p.837

Nanostructuring Techniques for 3C-SiC(100) NEMS Structures
p.841

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Electrical Characterization and Reliability of...

Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices

Abstract:

In this paper, nitrided insulators such as N2O-grown oxides, deposited SiO2 annealed in N2O, and deposited SiNx/SiO2 annealed in N2O on thin-thermal oxides have been investigated for realization of high performance n- and p-type 4H-SiC MIS devices. The MIS capacitors were utilized to evaluate MIS interface characteristics and the insulator reliability. The channel mobility was determined by using the characteristics of planar MISFETs. Although the N2O-grown oxides are superior to the dry O2-grown oxides, the deposited SiO2 and the deposited SiNx/SiO2 exhibited lower interface state density (n-MIS: below 7x1011 cm-2eV-1 at EC-0.2 eV, p-MIS: below 6x1011 cm-2eV-1 at EV+0.2 eV) and higher channel mobility (n-MIS: over 25 cm2/Vs, p-MIS: over 10 cm2/Vs). In terms of reliability, the deposited SiO2 annealed in N2O exhibits a high charge-to-breakdown over 50 C/cm2 at room temperature and 15 C/cm2 at 200°C. The nitrided-gate insulators formed by deposition method have superior characteristics than the thermal oxides grown in N2O.

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Materials Science Forum (Volumes 645-648)

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825-828

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https://doi.org/10.4028/www.scientific.net/MSF.645-648.825

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April 2010

Authors:

Masato Noborio, Michael Grieb, Anton J. Bauer, Dethard Peters, Peter Friedrichs, Jun Suda, Tsunenobu Kimoto

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Channel Mobility, Interface State Density (D_it), Nitridation, Time-Dependent Dielectric Breakdown

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