Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps

Abstract:

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Rapid Thermal Processing (RTP) has been evaluated as an alternative to conventional furnace technique for oxidation of 4H- and 3C-SiC. We show that the growth of the SiO2 films in a RTP chamber is orders of magnitude faster than in a conventional furnace. As well as being fast, this process leads to oxide films with quality comparable or even better than the one grown in classical furnaces. Studying different gas for oxidizing and annealing ambient, we demonstrate that SiO2/SiC interface is significantly improved when using N2O instead of O2 or even N2-O2 dilution.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

817-820

DOI:

10.4028/www.scientific.net/MSF.645-648.817

Citation:

A. Constant et al., "Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps", Materials Science Forum, Vols. 645-648, pp. 817-820, 2010

Online since:

April 2010

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Price:

$35.00

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