Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps

Aurore Constant; Nicolas Camara; Philippe Godignon; Maxime Berthou; Jean Camassel; Jean Manuel Decams

doi:10.4028/www.scientific.net/MSF.645-648.817

Paper Titles

Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
p.799

Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
p.805

Model Calculations of SiC Oxide Growth Rate at Various Oxidation Temperatures Based on the Silicon and Carbon Emission Model
p.809

In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures
p.813

Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps
p.817

Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy
p.821

Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices
p.825

Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC
p.829

Reliability of Thin Thermally Grown SiO₂ on 3C-SiC Studied by Scanning Probe Microscopy
p.833

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Rapid and Efficient Oxidation Process of SiC by In...

Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps

Abstract:

Rapid Thermal Processing (RTP) has been evaluated as an alternative to conventional furnace technique for oxidation of 4H- and 3C-SiC. We show that the growth of the SiO2 films in a RTP chamber is orders of magnitude faster than in a conventional furnace. As well as being fast, this process leads to oxide films with quality comparable or even better than the one grown in classical furnaces. Studying different gas for oxidizing and annealing ambient, we demonstrate that SiO2/SiC interface is significantly improved when using N2O instead of O2 or even N2-O2 dilution.

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Materials Science Forum (Volumes 645-648)

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817-820

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.817

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Online since:

April 2010

Authors:

Aurore Constant, Nicolas Camara, Philippe Godignon, Maxime Berthou, Jean Camassel, Jean Manuel Decams

Keywords:

MOS Capacitor, Nitridation, Oxidation Process, Rapid Thermal Annealing (RTA)

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References

[1] P. Jamet, S. Dimitrijev and P. Tanner: J. Appl. Phys. Vol. 90 (2001), p.5058.

Google Scholar

[2] C.D. Fung and J.J. Kopanski: Appl. Phys. Lett. Vol. 45 (1984), p.757.

Google Scholar

[3] Y. Song, S. Dhar, L.C. Feldman, G. Chung and J.R. Williams: J. Appl. Phys. Vol. 95 (2004), p.4953.

Google Scholar

[4] A. Ludsteck, J. Schulze, I. Eisele, W. Dietl and Z. Nenyei: Appl. Phys. Lett. Vol. 95 (2004), p.2827.

Google Scholar

[5] M. L. Green, T. Sorsch, L. C. Feldman, W. N. Lennard, E. P. Gusev, E. Garfunkel, H. C. Lu, and T. Gustafsson: Appl. Phys. Lett. Vol. 71 (1997), p.2979.

DOI: 10.1063/1.120235

Google Scholar

[6] K. Y. Cheong, S. Dimitrijev, J. Han, and H. B. Harrison: J. Appl. Phys. Vol. 93 (2003), p.5682.

Google Scholar

[7] Kuan Yew Cheong, Wook Bahng, and Nam-Kyun Kim: Appl. Phys. Lett. Vol. 87 (2005), p.212102.

Google Scholar

[8] K.A. Ellis, and R.A. Buhrman: Appl. Phys. Lett. Vol. 68 (1996), p.1696.

Google Scholar

[9] S. A. Corrêa, C. Radtke, G. V. Soares, L. Miotti, I. J. R. Baumvol, S. Dimitrijev, J. Han, L. Hold, F. Kong, and F. C. Stedile: Appl. Phys. Lett. Vol. 94 (2009), p.251909.

DOI: 10.1063/1.3159812

Google Scholar

[10] A. Constant, N. Camara, P. Godignon, and J. Camassel: Appl. Phys. Lett. Vol. 94 (2009), p.063508.

Google Scholar