Model Calculations of SiC Oxide Growth Rate at Various Oxidation Temperatures Based on the Silicon and Carbon Emission Model

Yasuto Hijikata; Hiroyuki Yaguchi; Sadafumi Yoshida

doi:10.4028/www.scientific.net/MSF.645-648.809

Paper Titles

Influence of Negative Charging on High Rate SiC Etching for GaN HEMT MMICs
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Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride
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Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
p.799

Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
p.805

Model Calculations of SiC Oxide Growth Rate at Various Oxidation Temperatures Based on the Silicon and Carbon Emission Model
p.809

In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures
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Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps
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Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy
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Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices
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Model Calculations of SiC Oxide Growth Rate at Various Oxidation Temperatures Based on the Silicon and Carbon Emission Model

Abstract:

We have tried to apply the oxidation model of SiC proposed previously, termed ‘Si-C emission model’, to the oxide growth rate at various oxidation temperatures. We have found that the model well reproduces the oxide thickness dependences of oxide growth rates for all of the temperatures measured for both of the SiC Si- and C-faces. We have estimated the temperature dependence of oxide depth profiles of Si and C interstitials by using the Si-C emission model, and discussed the structure at/near the SiC–oxide interface.