Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC
The electrical properties of oxides fabricated on n-type 3C-SiC (001) using wet oxidation and an advanced oxidation process combining SiO2 deposition with rapid post oxidation steps have been compared. Two alternative SiO2 deposition techniques have been studied: the plasma enhanced chemical vapor deposition (PECVD) and the low pressure chemical vapor deposition (LPCVD). The post-oxidized PECVD oxide is been demonstrated to be beneficial in terms of interface traps density and reliability.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
R. Esteve et al., "Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC", Materials Science Forum, Vols. 645-648, pp. 829-832, 2010