Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC

Abstract:

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The electrical properties of oxides fabricated on n-type 3C-SiC (001) using wet oxidation and an advanced oxidation process combining SiO2 deposition with rapid post oxidation steps have been compared. Two alternative SiO2 deposition techniques have been studied: the plasma enhanced chemical vapor deposition (PECVD) and the low pressure chemical vapor deposition (LPCVD). The post-oxidized PECVD oxide is been demonstrated to be beneficial in terms of interface traps density and reliability.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

829-832

DOI:

10.4028/www.scientific.net/MSF.645-648.829

Citation:

R. Esteve et al., "Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC", Materials Science Forum, Vols. 645-648, pp. 829-832, 2010

Online since:

April 2010

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Price:

$35.00

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