Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC

Romain Esteve; Adolf Schöner; Sergey A. Reshanov; Carl Mikael Zetterling

doi:10.4028/www.scientific.net/MSF.645-648.829

Paper Titles

In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures
p.813

Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps
p.817

Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy
p.821

Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices
p.825

Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC
p.829

Reliability of Thin Thermally Grown SiO₂ on 3C-SiC Studied by Scanning Probe Microscopy
p.833

Effects of Post-Deposition Annealing on CeO₂ Gate Prepared by Metal-Organic Decomposition (MOD) Method on 4H-SiC
p.837

Nanostructuring Techniques for 3C-SiC(100) NEMS Structures
p.841

SiC on SOI Resonators: A Route for Electrically Driven MEMS in Harsh Environment
p.845

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Comparative Study of Thermal Oxides and...

Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC

Abstract:

The electrical properties of oxides fabricated on n-type 3C-SiC (001) using wet oxidation and an advanced oxidation process combining SiO2 deposition with rapid post oxidation steps have been compared. Two alternative SiO2 deposition techniques have been studied: the plasma enhanced chemical vapor deposition (PECVD) and the low pressure chemical vapor deposition (LPCVD). The post-oxidized PECVD oxide is been demonstrated to be beneficial in terms of interface traps density and reliability.