Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

F. Danie Auret; Walter E. Meyer; M. Diale; P.J. Janse Van Rensburg; S.F. Song; Kristiaan Temst; André Vantomme

doi:10.4028/www.scientific.net/MSF.679-680.804

Paper Titles

Observations on C-Face SiC Graphene Growth in Argon
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Influence of Intercalated Silicon on the Transport Properties of Graphene
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Temperature Dependent Structural Evolution of Graphene Layers on 4H-SiC(0001)
p.797

InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate
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Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation
p.804

Electrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8°-Off-Axis 4H-SiC Epilayers
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Al-Si-Ti Ohmic Contacts on N-Type Gallium Nitride
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Ohmic Contact Resistance to GaN Devices Dependence with on Temperature for GaN Devices T
p.816

Characterization of Fast Switching Capability for Diamond Schottky Barrier Diode
p.820

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Electrical Characterization of Metastable Defects...

Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

Abstract:

Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation induced defects in GaN. Two of the implantation induced defects, E1 and E2, with DLTS peaks in the 100 – 200 K temperature range, had DLTS signals that could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and 0.27 eV below the conduction band, respectively, are two configurations of a metastable defect. These two defect states can be reproducibly removed and re-introduced by changing the pulse, bias and temperature conditions, and the transformation processes follow first order kinetics.