Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

Abstract:

Article Preview

Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation induced defects in GaN. Two of the implantation induced defects, E1 and E2, with DLTS peaks in the 100 – 200 K temperature range, had DLTS signals that could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and 0.27 eV below the conduction band, respectively, are two configurations of a metastable defect. These two defect states can be reproducibly removed and re-introduced by changing the pulse, bias and temperature conditions, and the transformation processes follow first order kinetics.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

804-807

DOI:

10.4028/www.scientific.net/MSF.679-680.804

Citation:

F. D. Auret et al., "Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation", Materials Science Forum, Vols. 679-680, pp. 804-807, 2011

Online since:

March 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.