Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation
Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation induced defects in GaN. Two of the implantation induced defects, E1 and E2, with DLTS peaks in the 100 – 200 K temperature range, had DLTS signals that could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and 0.27 eV below the conduction band, respectively, are two configurations of a metastable defect. These two defect states can be reproducibly removed and re-introduced by changing the pulse, bias and temperature conditions, and the transformation processes follow first order kinetics.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
F. D. Auret et al., "Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation", Materials Science Forum, Vols. 679-680, pp. 804-807, 2011