InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate

Ji Sheng Han; Sima Dimitrjiev; Li Wang; Alan Iacopi; Qu Shuang; Xian Gang Xu

doi:10.4028/www.scientific.net/MSF.679-680.801

Paper Titles

High Temperature Graphene Formation on Capped and Uncapped SiC
p.785

Observations on C-Face SiC Graphene Growth in Argon
p.789

Influence of Intercalated Silicon on the Transport Properties of Graphene
p.793

Temperature Dependent Structural Evolution of Graphene Layers on 4H-SiC(0001)
p.797

InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate
p.801

Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation
p.804

Electrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8°-Off-Axis 4H-SiC Epilayers
p.808

Al-Si-Ti Ohmic Contacts on N-Type Gallium Nitride
p.812

Ohmic Contact Resistance to GaN Devices Dependence with on Temperature for GaN Devices T
p.816

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680InGaN/GaN Multiple Quantum Well Blue LEDs on...

InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate

Abstract:

Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

801-803

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.801

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Online since:

March 2011

Authors:

Ji Sheng Han, Sima Dimitrjiev, Li Wang, Alan Iacopi, Qu Shuang, Xian Gang Xu

Keywords:

Gallium Nitride (GaN), Leds, Quantum Well, Silicon Carbide (SiC)

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References

[1] N. Grandjean and M. Ilegems, Visible InGaN/GaN Quantum-Dot Material and Devices, Proc. IEEE, 93, 1853 (2007).

DOI: 10.1109/jproc.2007.900970

Google Scholar

[2] S.P. Denbarrs, Gallium-Nitride-Based Materials for Blue to Ultraviolet Optoelectronics Devices, Proc. IEEE, 85, 1749 (2007).

DOI: 10.1109/5.649651

Google Scholar

[3] S. Nakamura, S. Pearton and G. Fasol, The Blue Laser Diode- The Complete Story, Springer, Second Edition (2000).

Google Scholar

[4] J.Y. Tsao, Light Emitting Diodes (LEDs) for General Illumination, OIDA (2002).

Google Scholar

[5] H.B. Harrison and S. Dimitrijev, Memory Cell, International Patent Application No. PCT/AU03/01186.

Google Scholar

[6] J. Komiyama, Y. Abe, S. Suzuki and H. Nakanishi, Suppression of crack generation in GaN epitaxy on Si using cubic SiC as intermediate layers, Appl. Phys. Lett., 88, 091901 (2006).

DOI: 10.1063/1.2175498

Google Scholar

[7] J. Komiyama, Y. Abe, S. Suzuki and H. Nakanishi, Stress reduction in epitaxial GaN films on Si using cubic SiC as intermediate layers, J. Appl. Phys., 100, 033519 (2006).

DOI: 10.1063/1.2226988

Google Scholar