InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate

Abstract:

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Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

801-803

DOI:

10.4028/www.scientific.net/MSF.679-680.801

Citation:

J. S. Han et al., "InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate", Materials Science Forum, Vols. 679-680, pp. 801-803, 2011

Online since:

March 2011

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Price:

$35.00

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