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Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC
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Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent
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Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach
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Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent

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Abstract:

Surface morphology and threading dislocation conversion behavior during solution growth of 4H-SiC using pure Si and Al-Si solvents was investigated. The growth surfaces on the C face were smoother than the Si face. By the addition of Al to the solvent, the growth surface became smooth on the C face and rough on the Si face. Threading screw dislocation conversion took place only in the grown crystals on the Si face and threading edge dislocation conversion occurs both on the Si face and the C face using the pure Si solvent. On the other hand, in the grown crystal on the C face using the Al-Si solvent, the threading dislocation conversion was hardly observed. These results indicate that the threading dislocation conversion behavior is influenced by the surface morphology.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

67-70

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.67

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Online since:

February 2014

Authors:

Shunta Harada*, Yuji Yamamoto, S. Xiao, M. Tagawa, Toru Ujihara

Keywords:

4H-SiC, Dislocation, Solution Growth, Surface Morphology

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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