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Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination

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Abstract:

Blocking characteristics of 2.2 kV and 3.3 kV -class 4H-SiC MOSFETs with various doping conditions for the edge termination region have been investigated. By optimizing the implanted dose into the edge termination structure consisting of junction termination extension (JTE) and field limiting ring (FLR), a breakdown voltage of 3,850 V for 3.3 kV -class MOSFET has been attained. This result corresponds to about 95% of the approximate parallel-plane breakdown voltage estimated from the doping concentration and the thickness of the epitaxial layer. Implanted doping for the JFET region is effective in reducing JFET resistance, resulting in the specific on-resistance of 14.2 mΩcm2 for 3.3 kV SiC MOSFETs. Switching characteristics at the high drain voltage of 2.0 kV are also discussed.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

915-918

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.915

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Online since:

February 2014

Authors:

Keiji Wada*, Kosuke Uchida, Ren Kimura, Mitsuhiko Sakai, Satoshi Hatsukawa, Kenji Hiratsuka, Noriyuki Hirakata, Yasuki Mikamura

Keywords:

Edge Termination, Field-Limiting Ring, High Voltage, MOSFET

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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