Materials Science Forum Vols. 821-823

Abstract: In this report we were able to successfully identify and localize in 3D 3C and 6H foreign polytypes and stress in the embedded epilayer by high resolution 3D Raman spectroscopy, that were otherwise invisible under the microscope or SEM, in non-contact and non-destructive way. Stripe patterned deep trenches with aspect ratio about 2 (depth=3.0μm; width=1.5μm) were formed on 4H-SiC substrate by ICP. The epitaxial layer was embedded in these trenches by SiC CVD. Poly type defects and stress in the embedded epilayer were mapped by curve-fitting of spectra obtained from Raman measurement of the embedded SiC epilayer. The location of the foreign polytypes and the stress inside the stripe pattern allows speculating on the origin of the defects and correlating it to the manufacturing process.

Abstract: This paper demonstrates three-dimensional imaging of threading screw dislocations (TSDs) and threading edge dislocations (TEDs) in 4H-SiC using two-photon-excited photoluminescence (2PPL) band-edge emission. Three-dimensional (3D) images of TSDs and TEDs are successfully obtained as dark contrasts on a bright background of band-edge emission. The intensity inversion of a 2PPL 3D image yields a perspective to visually examine the propagation behavior of dislocations. The tilt angles of TEDs are also measured and shown to correlate with the directions of the extra half planes of TEDs.

Abstract: We have investigated the electrical properties of germanium-implanted n-type 4H-SiC epitaxial layers. Deep level transient spectroscopy (DLTS) was employed in order to study the influence of germanium ions on implantation-induced point defects. In particular, we observe a decrease of the concentration of Z_1/2 defect with increasing dose of implanted germanium.

Abstract: The carbon vacancy (V_C) is a minority carrier lifetime controlling defect in 4H-SiC and it is formed during high temperature treatment. In this study, we have performed heat treatment on two sets of n-type 4H-SiC epitaxial samples. The first set was isothermally treated at 1850 °C to follow the evolution of V_C as a function of time. The V_C concentration is not affected by changing the duration. Samples of the other set were treated at 1950 °C for 10 min, but with different cooling rates and a reduction of the V_C concentration was indeed demonstrated by lowering the cooling rate. The V_C concentration in the slow-cooled sample is about 2 times less than in the fast-cooled one, reflecting a competition between equilibrium conditions and the cooling rate.

Abstract: Atomic-scale defects in silicon carbide exhibit very attractive quantum properties that can be exploited to provide outstanding performance in various sensing applications. Here we provide the results of our studies of the spin-optical properties of the vacancy related defects in SiC. Our studies show that several spin-3/2 defects in silicon carbide crystal are characterized by nearly temperature independent axial crystal fields, which makes these defects very attractive for vector magnetometry. The zero-field splitting of another defect exhibits on contrast a giant thermal shift of 1.1 MHz/K at room temperature, and can be used for temperature sensing applications.

Abstract: — The distribution of extended defects in silicon carbide (SiC) crystals grown on profiled seeds by the sublimation (physical vapor transport) method has been studied by optical microscopy in combination with chemical etching and AFM. It is established that free lateral growth on protruding relief elements (mesas) is accompanied by a sharp decrease in the density of threading dislocations and micropipes. The decreased density of dislocations is retained after growing a thick layer that involves the overgrowth of grooves that separated individual mesas.

Abstract: The absolute surface energies of three major low index surfaces of cubic silicon carbide (3C-SiC) are determined by first-principles density functional theory calculations. Calculations show that among clean 3C-SiC surfaces the Si-terminated 3C-SiC(001)-(3x2) surface has the lowest energy. The second and third lowest energy surfaces are the Si-terminated 3C-SiC(111)-(√3x√3) surface and the nonreconstructed 3C-SiC(110) surface. Hydrogen passivation greatly reduces both the absolute surface energies of the low index 3C-SiC surfaces and the surface energy anisotropy. In particular, the surface energies of fully passivated 3C-SiC(110) and (111) surfaces become indistinguishable at hydrogen-rich deposition conditions.

Abstract: On 4H-SiC Si-face substrates after H₂ etching, the defect with “line” feature parallel to a step as “bunched-step line” was observed. Using X-ray topography and KOH etching, we confirmed that the bunched-step line originated from basal plane dislocation (BPD). Use of the substrate with the lowest BPD density will be effective to reduce bunched-step line that would affect oxide layer reliability on an epitaxial layer. However, more detail investigation needs to classify the BPD that would become a starting point of bunched-step line.

Abstract: We performed real-time observations of SiC oxidation at various temperatures by in-situ spectroscopic ellipsometry using a Si-face, an a-face and a C-face substrates. We calculated oxide growth rates based on “Si-C emission model,” taking into account the emission of interfacial Si and C atoms from the SiC–SiO₂ interface. The calculated values well reproduced the oxide thickness dependence of oxide growth rates. We discussed the SiC oxidation mechanism using the parameters deduced from the calculations.

Abstract: Density functional calculations were performed for the –H, –OH and –F functional groups adsorbed onto the surface of pseudo-spherical 4H-SiC quantum dots with diameters ranging from 10 to 22 Å. We find that for the investigated diameter range, the H-terminated SiC-quantum dots exhibit strong size dependent quantum confinement effects, while for –F and –OH terminations, the optical gap remains largely unchanged. The –H termination shows an optical absorption onset well above that of –F and –OH for a similar cluster size, which is attributed to the localisation of HOMO and LUMO states to the quantum dot core. Based on our calculations, we suggest that the –H functionalisation is a more promising route for engineering the optical properties of SiC-quantum dots, since this could lead to a wider control over the optical absorption onsets, when compared to –OH and –F terminations.